EEWORLDEEWORLDEEWORLD

Part Number

Search

GS8182S09GBD-167IT

Description
DDR SRAM, 2MX9, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165
Categorystorage    storage   
File Size340KB,36 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Environmental Compliance  
Download Datasheet Parametric View All

GS8182S09GBD-167IT Overview

DDR SRAM, 2MX9, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165

GS8182S09GBD-167IT Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerGSI Technology
Parts packaging codeBGA
package instructionLBGA,
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Maximum access time0.5 ns
Other featuresPIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B165
JESD-609 codee1
length15 mm
memory density18874368 bit
Memory IC TypeDDR SRAM
memory width9
Humidity sensitivity level3
Number of functions1
Number of terminals165
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX9
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.4 mm
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width13 mm
Base Number Matches1
Preliminary
GS8182S08/09/18BD-333/300/250/200/167
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• Simultaneous Read and Write SigmaSIO™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• DLL circuitry for wide output data valid window and future
frequency scaling
• Burst of 2 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ mode pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• Pin-compatible with present 9Mb, 36Mb, and 72Mb and
future 144Mb devices
• 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
18Mb Burst of 2
DDR SigmaSIO-II SRAM
333 MHz–167 MHz
1.8 V V
DD
1.8 V and 1.5 V I/O
Bottom View
165-Bump, 13 mm x 15 mm BGA
1 mm Bump Pitch, 11 x 15 Bump Array
JEDEC Std. MO-216, Variation CAB-1
SigmaRAM™ Family Overview
GS8182S08/09/18 are built in compliance with the SigmaSIO-
II SRAM pinout standard for Separate I/O synchronous
SRAMs. They are 16,777,216-bit (18Mb) SRAMs. These are
the first in a family of wide, very low voltage HSTL I/O
SRAMs designed to operate at the speeds needed to implement
economical high performance networking systems.
inputs, C and C. If the C clocks are tied high, the K clocks are
routed internally to fire the output registers instead. Each Burst
of 2 SigmaSIO-II SRAM also supplies Echo Clock outputs,
CQ and CQ, which are synchronized with read data output.
When used in a source synchronous clocking scheme, the Echo
Clock outputs can be used to fire input registers at the data’s
destination.
Because Separate I/O Burst of 2 RAMs always transfer data in
two packets, A0 is internally set to 0 for the first read or write
transfer, and automatically incremented by 1 for the next
transfer. Because the LSB is tied off internally, the address
field of a Burst of 2 RAM is always one address pin less than
the advertised index depth (e.g., the 1M x 18 has a 512K
addressable index).
Clocking and Addressing Schemes
A Burst of 2 SigmaSIO-II SRAM is a synchronous device. It
employs dual input register clock inputs, K and K. The device
also allows the user to manipulate the output register clock
input quasi independently with dual output register clock
Parameter Synopsis
- 333
tKHKH
tKHQV
3.0 ns
0.45 ns
-300
3.3 ns
0.45 ns
-250
4.0 ns
0.45 ns
-200
5.0 ns
0.45 ns
-167
6.0 ns
0.5 ns
Rev: 1.00a 6/2007
1/36
© 2007, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
What is the difference between SOP package and DIP package!
SOP packaging is a form of component packaging. Common packaging materials include plastic, ceramic, glass, metal, etc. Plastic packaging is now basically used. It has a wide range of applications and...
九芯语音ic Domestic Chip Exchange
Which is more effective in eliminating the back EMF of inductive loads, TVS or varistor?
The power supply and disconnection of 12V door locks (such as magnetic locks, cathode locks, etc.) are controlled by relays. The back electromotive force generated by the door locks every time they sw...
wwf0123 Analog electronics
The chip cannot be removed
The external FLASH of STM32F746GDiscovery is broken. I want to replace it with a new one, but I can't blow it off with an air gun. I tried twice, but I couldn't blow it off. The first time I tried, I ...
ilovefengshulin Making friends through disassembly
A must-read summary of drone principles (IV) Professional terminology for drones
[b]Aerial photography drones can only be multi-rotor drones? Parrot stands up and gives you a fixed-wing Parrot Disco... [/b] [color=#444444][backcolor=rgb(255, 255, 255)][font=Verdana, Arial, sans-se...
兰博 Electronics Design Contest
MicroPython Hands-on (36) - MixPY Hello world
[i=s]This post was last edited by eagler8 on 2020-6-30 07:29[/i]MixPY——Make love (AI) within reach...
eagler8 MicroPython Open Source section
【i.MX6ULL】Driver Development 12——Capacitive Touch Driver Practice (Part 1)
The previous article introduced the use of LCD screen. This screen also has a touch function. This article will introduce the use of the touch function of LCD. There is a lot of content about touch, w...
DDZZ669 ARM Technology

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号