SA48 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> diode> SA48

SA48: DescriptionTVS Diode; CategoryDiscrete semiconductor diode; File Size57KB，4 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

Parametric View All

SA48 Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	SA48	-	-	View	Buy Now

SA48 Overview

TVS Diode

Features

Product Name: TVS Diode

Product model: SA48

product features:

500W Peak pulse power capability*500W Peak pulse power capability

Excellent clamping capability

Low incremental surge resistance

Fast response time:Typically less than 1.0ps from 0v to VBR for unidirection and 5.0 ns for bidirectional types

Mechanical data:

Cases: Molded plastic

Epoxy:UL94V-0 rate flame retardant

Lead :Axial leads, solderable per MIL- STD-202, Method 208 guaranteed

Polarity: Color band denotes cathode except Bipolar

Mounting position :Any

Weight:0.40 gram

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

product data:

Peak Power Dissipation PPK Forward power consumption: Minimun 500W

Peak Forward Surge Current IFSM Forward pulse current: 70A

Maximum Instaneous Forward Voltage at 50A for Unidirectional Only VF Maximum forward voltage drop: 3.5 V

Steady State Power Dissipation PM（AV）：1.0W

Operating and Storage Temperature Range Tj. Tstg Operating Junction Temperature: -55 to +150℃

Breakdown Voltage V(BR) Breakdown Voltage: Min: 53.3V Max: 65.2V

Test Current at IT Test current: 1.0mA

Stand-Off Voltage Vwm Stand-Off Voltage: 48.0V

Max Reverse Leakage at Vwm IR Maximum reverse leakage current: 50μA

Max Peak Pulse Current IPPM Maximum peak pulse current: 6.1A

Max Clamping Voltage at IPPM VC 最大箝位电压：85.5V

Maximum Temperature Coefficient of VBR: 63.0MV/℃

Package: DO-15

SA48 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Code	unknow
Breakdown voltage nominal value	59.25 V
Maximum clamping voltage	85.5 V
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
polarity	UNIDIRECTIONAL
Maximum repetitive peak reverse voltage	48 V
surface mount	NO

Recommended Resources

Parallel output current expansion circuit

Bidirectional start reverse braking control circuit

Fish tank intermittent oxygenation timer circuit

AC welding machine no-load power-saving circuit

1kHz signal generator circuit

4GHZ oscillator circuit

Who knows the principle of voltage doubling circuit? No transformer or inductor is used, just a few diodes and capacitors...: Who knows the principle of voltage doubling circuit? No transformer or inductor is used, just a few diodes and capacitors are used to increase the voltage. I don't know how much load capacity this vol...; QWE4562009 Discrete Device

EEWORLD University Hall----Application of GaN power devices in 1.4KV multi-level system: Application of GaN power devices in 1.4KV multi-level systems : https://training.eeworld.com.cn/course/5548...; hi5 Power technology

TI's comprehensive overview of RFID applications: [Abstract]TI can be said to be a leader in RFID applications.RFID product anti-counterfeiting applicationSmart tags can be applied to product labels and identified through related reading and writing ...; JasonYoo RF/Wirelessly

Design of electronic neon lamp transformer: Design of electronic neon lamp transformer...; zbz0529 Test/Measurement

Classification and characteristics of PIC 8-bit microcontrollers (Part 2): The PIC microcontroller series products launched by Microchip of the United States first adopted the embedded microcontroller with RISC structure. Its high speed, low voltage, low power consumption, h...; rain Microchip MCU

6. DMA implementation of USART1 sending and receiving: The following GD32L233C-START special review: 1. Unboxing review https://en.eeworld.com/bbs/thread-1192788-1-1.html 2. GD32L233C-START environment construction https://en.eeworld.com/bbs/thread-119305...; sonicfirr GD32 MCU

Popular Components