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SA11

Description
TVS Diode
CategoryDiscrete semiconductor    diode   
File Size57KB,4 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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SA11 Overview

TVS Diode

Features

Product Name: TVS Diode


Product model: SA11


product features:


500W Peak pulse power capability*500W Peak pulse power capability


Excellent clamping capability


Low incremental surge resistance


Fast response time:Typically less than 1.0ps from 0v to VBR for unidirection and 5.0 ns for bidirectional types



Mechanical data:


Cases: Molded plastic


Epoxy:UL94V-0 rate flame retardant


Lead :Axial leads, solderable per MIL- STD-202, Method 208 guaranteed


Polarity: Color band denotes cathode except Bipolar


Mounting position :Any


Weight:0.40 gram



Maximum Ratings and Electrical Characteristics:


Rating at 25℃ ambient temperature unless otherwise specified.



product data:


Peak Power Dissipation PPK Forward power consumption: Minimun 500W


Peak Forward Surge Current IFSM Forward pulse current: 70A


Maximum Instaneous Forward Voltage at 50A for Unidirectional Only VF Maximum forward voltage drop: 3.5 V


Steady State Power Dissipation PM(AV):1.0W


Operating and Storage Temperature Range Tj. Tstg Operating Junction Temperature: -55 to +150℃


Breakdown Voltage V(BR) Breakdown Voltage: Min: 12.2V Max: 14.9V


Test Current at IT Test current: 1.0mA


Stand-Off Voltage Vwm Stand-Off Voltage: 11.0V


Max Reverse Leakage at Vwm IR Maximum reverse leakage current: 1.0μA


Max Peak Pulse Current IPPM Maximum peak pulse current: 26A


Max Clamping Voltage at IPPM VC 最大箝位电压:20.1V


Maximum Temperature Coefficient of VBR: 11.0MV/℃



Package: DO-15


SA11 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codeunknow
Breakdown voltage nominal value13.55 V
Maximum clamping voltage20.1 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage11 V
surface mountNO

SA11 Preview

Download Datasheet
SA5.0 THRU SA170A
Features
*
500W Peak pulse power capability
*
Excellent clamping capability
*
Low incremental surge resistance
*
Fast response time:Typically less than 1.0ps from 0v to
DO-15
VBR for unidirection and 5.0 ns for bidirectional types.
Mechanical Data
*
Cases:Molded plastic
*
Epoxy:UL94V-0 rate flame retardant
*
Lead:Axial leads,solderable per MIL- STD-202,
.140(3.6)
.104(2.6)
DIA.
1.0(25.4)
MIN.
.300(7.6)
.230(5.8)
Method 208 guaranteed
*
Polarity:Color band denotes cathode except Bipolar
*
Mounting position:Any
*
Weight:0.40 gram
.034(.9)
.028(.7)
DIA.
Dimensions in inches and (millimeters)
1.0(25.4)
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
o
Type Number
Peak Power Dissipation (Note 1)
Peak Pulse reverse current (Note 1)
Steady State Power Dissipation (Note 2)
Peak Forward Surge Current (Note 3)
Maximum Instaneous Forward Voltage at
50.0A for Unidirectional Only
Operating and Storage Temperature Range
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
T
J
,T
STG
Value
Minimun 500
See Table
1.0
70
3.5
-55~+175
o
Units
W
A
W
A
V
0
C
NOTES: 1. 10/1000us waveform Non-repetitive Current Pulse Per Fig.3 and Derated above T
A
=25 C Per Fig.2.
o
2.T1=75 C,lead lengths 9.5mm, Mounted on Copper Pad Area of (40 x40 mm) Fig.5
3.Measured on 8.3ms Single Half Sine-Wave or Equivalent Square Wave,Duty Cycle=4 Pulses Per Minute Maximun.
Devices for Bipolar Applications
1.For Bidirectional Use C or CA Suffix for Types SA5.0 thru types SA170 (e.g.SA5.0C,SA170CA)
2.Electrical Characteristics Apply in Both Directions.
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