RJK4515DPK-00-T0 datasheet, PDF

RJK4515DPK-00-T0: DescriptionSilicon N Channel MOS FET High Speed Power Switching; CategoryDiscrete semiconductor The transistor; File Size73KB，4 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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RJK4515DPK-00-T0 Overview

Silicon N Channel MOS FET High Speed Power Switching

Parameter Name	Attribute value
Parts packaging code	TO-3P
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	450 V
Maximum drain current (ID)	27 A
Maximum drain-source on-resistance	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	81 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	RJK4515DPK-00-T0	RJK4515DPK
Description	Silicon N Channel MOS FET High Speed Power Switching	Silicon N Channel MOS FET High Speed Power Switching

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