RJK2006DPJ, RJK2006DPE, RJK2006DPF
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0512-0200
Rev.2.00
Nov 19, 2009
Features
•
Low on-resistance
•
Low leakage current
•
High speed switching
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L)
4
: PRSS0004AE-B
LDPAK(S)-(1)
4
: PRSS0004AE-C
LDPAK(S)-(2) )
4
D
G
1
1
2
3
1
1. Gate
2. Drain
3. Source
4. Drain
S
2
3
2
3
RJK2006DPJ
RJK2006DPE
RJK2006DPF
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μs,
duty cycle
≤
1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch
≤
150°C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Pch
Note2
θch-c
Tch
Tstg
Ratings
200
±30
40
100
40
100
27
48.6
100
1.25
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Page 1 of 7
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Body-Drain diode reverse recovery
charge
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
|y
fs
|
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Q
rr
Min
200
—
—
3.0
15
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
26
0.052
1800
330
43
30
180
85
100
43
11
20
1.0
150
0.8
Max
—
1
±0.1
4.5
—
0.059
—
—
—
—
—
—
—
—
—
—
1.5
—
—
Unit
V
μA
μA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
μC
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 200 V, V
GS
= 0
V
GS
=
±30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 20 A, V
DS
= 10 V
Note4
I
D
= 20 A, V
GS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 20 A
V
GS
= 10 V
R
L
= 5
Ω
Rg = 10
Ω
V
DD
= 160 V
V
GS
= 10 V
I
D
= 40 A
I
F
= 40 A, V
GS
= 0
Note4
I
F
= 40 A, V
GS
= 0
di
F
/dt = 100 A/μs
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Page 2 of 7
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Main Characteristics
Maximum Safe Operation Area
1000
10
=
10
0
Typical Output Characteristics
50
10 V
7V
8V
6.5V
Ta = 25°C
Pulse Test
6V
Drain Current I
D
(A)
PW
10
Operation in this
area is limited by
R
DS(on)
μ
s
Drain Current I
D
(A)
100
μ
s
40
30
1
20
5.5 V
10
0.1
Tc = 25°C
1 shot
0.01
0.1
1
V
GS
= 5 V
10
100
1000
0
0
4
8
12
16
20
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
1
V
GS
= 10 V
Ta = 25°C
Pulse Test
Typical Transfer Characteristics
50
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
40
30
0.1
20
Tc = 75°C
25°C
−25°C
10
0
0.01
1
10
100
0
2
4
6
8
10
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
V
GS
= 10 V
Pulse Test
0.16
I
D
= 40 A
0.12
20 A
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Body-Drain Diode Reverse
Recovery Time (Typical)
1000
Reverse Recovery Time trr (ns)
0.20
100
0.08
10 A
0.04
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
1
10
100
0
-25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Reverse Drain Current I
DR
(A)
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Page 3 of 7
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
10000
Ta = 25°C
Dynamic Input Characteristics (Typical)
I
D
= 40 A
Ta = 25
°C
V
GS
V
DD
= 160 V
100 V
50 V
Capacitance C (pF)
Ciss
1000
300
12
Coss
100
Crss
V
GS
= 0
f = 1 MHz
50
100
200 V
DS
8
100
V
DD
= 160 V
100 V
50 V
20
40
60
80
4
10
0
0
100
0
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nC)
50
Gate to Source Cutoff Voltage V
GS(off)
(V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Reverse Drain Current I
DR
(A)
V
GS
= 0 V
Ta = 25
°C
Pulse Test
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
V
DS
= 10 V
40
4
30
3
I
D
= 10 mA
1 mA
0.1 mA
20
10
0
0
0.4
0.8
1.2
1.6
2.0
2
1
0
-25
0
25
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Case Temperature
Tc (°C)
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Page 4 of 7
Gate to Source Voltage V
GS
(V)
400
16
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Normalized Transient Thermal Impedance vs. Pulse Width
3
Normalized Transient Thermal Impedance
γ
s (t)
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 1.25°C/W, Tc = 25°C
P
DM
PW
T
0.03
0.02
1
e
0.0
puls
ot
sh
1
100
μ
1m
10 m
Pulse Width
D=
PW
T
0.01
10
μ
100 m
PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 100 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(off)
tf
90%
td(on)
tr
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Page 5 of 7
京公网安备 11010802033920号
EEWORLD
