128 X 8 I2C/2-WIRE SERIAL EEPROM, UUC8
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Microchip |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Other features | AUTOMATIC WRITE; 2 WIRE INTERFACE |
| Maximum clock frequency (fCLK) | 0.1 MHz |
| I2C control byte | 1010DDDR |
| JESD-30 code | X-XUUC-N8 |
| JESD-609 code | e3 |
| memory density | 1024 bit |
| Memory IC Type | EEPROM |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 8 |
| word count | 128 words |
| character code | 128 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 128X8 |
| Output characteristics | OPEN-DRAIN |
| Package body material | UNSPECIFIED |
| encapsulated code | DIE |
| Encapsulate equivalent code | WAFER |
| Package shape | UNSPECIFIED |
| Package form | UNCASED CHIP |
| Parallel/Serial | SERIAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 5 V |
| Certification status | Not Qualified |
| Serial bus type | I2C |
| Maximum standby current | 0.0001 A |
| Maximum slew rate | 0.007 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | NO LEAD |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Maximum write cycle time (tWC) | 1 ms |
| Base Number Matches | 1 |
| 85C72/W | 85C72/S | |
|---|---|---|
| Description | 128 X 8 I2C/2-WIRE SERIAL EEPROM, UUC8 | 128 X 8 I2C/2-WIRE SERIAL EEPROM, UUC8 |
| Is it Rohs certified? | conform to | conform to |
| Maker | Microchip | Microchip |
| Reach Compliance Code | compliant | compliant |
| ECCN code | EAR99 | EAR99 |
| Other features | AUTOMATIC WRITE; 2 WIRE INTERFACE | AUTOMATIC WRITE; 2 WIRE INTERFACE |
| Maximum clock frequency (fCLK) | 0.1 MHz | 0.1 MHz |
| I2C control byte | 1010DDDR | 1010DDDR |
| JESD-30 code | X-XUUC-N8 | X-XUUC-N8 |
| JESD-609 code | e3 | e3 |
| memory density | 1024 bit | 1024 bit |
| Memory IC Type | EEPROM | EEPROM |
| memory width | 8 | 8 |
| Number of functions | 1 | 1 |
| Number of terminals | 8 | 8 |
| word count | 128 words | 128 words |
| character code | 128 | 128 |
| Operating mode | SYNCHRONOUS | SYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C |
| organize | 128X8 | 128X8 |
| Output characteristics | OPEN-DRAIN | OPEN-DRAIN |
| Package body material | UNSPECIFIED | UNSPECIFIED |
| encapsulated code | DIE | DIE |
| Encapsulate equivalent code | WAFER | DIE OR CHIP |
| Package shape | UNSPECIFIED | UNSPECIFIED |
| Package form | UNCASED CHIP | UNCASED CHIP |
| Parallel/Serial | SERIAL | SERIAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | 260 |
| power supply | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified |
| Serial bus type | I2C | I2C |
| Maximum standby current | 0.0001 A | 0.0001 A |
| Maximum slew rate | 0.007 mA | 0.007 mA |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4 V | 4 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V |
| surface mount | YES | YES |
| technology | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL |
| Terminal surface | Matte Tin (Sn) | Matte Tin (Sn) |
| Terminal form | NO LEAD | NO LEAD |
| Terminal location | UPPER | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED | 40 |
| Maximum write cycle time (tWC) | 1 ms | 1 ms |
| Base Number Matches | 1 | 1 |
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