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NTE5824

Description
Rectifier Diode, 1 Phase, 1 Element, 12A, 1000V V(RRM), Silicon, DO-4,
CategoryDiscrete semiconductor    diode   
File Size18KB,2 Pages
ManufacturerNTE
Websitehttp://www.nteinc.com
Download Datasheet Parametric Compare View All

NTE5824 Overview

Rectifier Diode, 1 Phase, 1 Element, 12A, 1000V V(RRM), Silicon, DO-4,

NTE5824 Parametric

Parameter NameAttribute value
package instructionO-MUPM-D1
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.4 V
JEDEC-95 codeDO-4
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Maximum output current12 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time0.2 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Base Number Matches1
NTE5818 thru NTE5825
Silicon Power Rectifier
Stud Mount, Fast Recovery, 12 Amp
Description:
The NTE5818 through NTE5825 are silicon fast recovery rectifiers in a DO4 type package having a
typical recovery time of 150ns providing high efficiency at frequencies to 250kHz. Typical applications
include DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference,
sonar power supplies, and free wheeling diodes.
Absolute Maximum Ratings:
(Note 1)
Peak Repetitive Reverse Voltage, V
RRM
NTE5818, NTE5819* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5820, NTE5821* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5822, NTE5823* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5824, NTE5825* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
Working Peak Reverse Voltage, V
RWM
NTE5818, NTE5819* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5820, NTE5821* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5822, NTE5823* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5824, NTE5825* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
DC Blocking Voltage, V
R
NTE5818, NTE5819* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5820, NTE5821* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5822, NTE5823* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5824, NTE5825* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
Non–Repetitive Peak Reverse Voltage, V
RSM
NTE5818, NTE5819* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
NTE5820, NTE5821* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
NTE5822, NTE5823* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 660V
NTE5824, NTE5825* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V
RMS Reverse Voltage, V
R(RMS)
NTE5818, NTE5819* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
NTE5820, NTE5821* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280V
NTE5822, NTE5823* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 420V
NTE5824, NTE5825* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Average Rectified Forward Current (Single Phase, Resistive Load, T
C
= +100°C), I
O
. . . . . . . . 12A
Non–Repetitive Peak Surge Current, I
FSM
(Surge applied at rated load conditions, One cycle) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0°C/W
Note 1. Standard polarity is cathode to case, (*) indicated anode to case.

NTE5824 Related Products

NTE5824 NTE5820 NTE5823 NTE5822 NTE5821 NTE5819
Description Rectifier Diode, 1 Phase, 1 Element, 12A, 1000V V(RRM), Silicon, DO-4, Rectifier Diode, 1 Phase, 1 Element, 12A, 400V V(RRM), Silicon, DO-4, Rectifier Diode, 1 Phase, 1 Element, 12A, 600V V(RRM), Silicon, DO-4, Rectifier Diode, 1 Phase, 1 Element, 12A, 600V V(RRM), Silicon, DO-4, Rectifier Diode, 1 Phase, 1 Element, 12A, 400V V(RRM), Silicon, DO-4, Rectifier Diode, 1 Phase, 1 Element, 12A, 200V V(RRM), Silicon, DO-4,
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Shell connection CATHODE CATHODE ANODE CATHODE ANODE ANODE
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.4 V 1.4 V 1.4 V 1.4 V 1.4 V 1.4 V
JEDEC-95 code DO-4 DO-4 DO-4 DO-4 DO-4 DO-4
JESD-30 code O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1
Maximum non-repetitive peak forward current 200 A 200 A 200 A 200 A 200 A 200 A
Number of components 1 1 1 1 1 1
Phase 1 1 1 1 1 1
Number of terminals 1 1 1 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 12 A 12 A 12 A 12 A 12 A 12 A
Package body material METAL METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1000 V 400 V 600 V 600 V 400 V 200 V
Maximum reverse recovery time 0.2 µs 0.2 µs 0.2 µs 0.2 µs 0.2 µs 0.2 µs
surface mount NO NO NO NO NO NO
Terminal form SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG
Terminal location UPPER UPPER UPPER UPPER UPPER UPPER
package instruction O-MUPM-D1 - O-MUPM-D1 O-MUPM-D1 - O-MUPM-D1
Maker - - NTE NTE NTE NTE
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