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NAND512W3A2CZA6E

Description
64M X 8 FLASH 1.8V PROM, 15000 ns, PBGA63
Categorystorage    storage   
File Size1MB,51 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
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NAND512W3A2CZA6E Overview

64M X 8 FLASH 1.8V PROM, 15000 ns, PBGA63

NAND512W3A2CZA6E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instructionTFBGA, BGA63,10X12,32
Contacts63
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time12000 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B63
length11 mm
memory density536870912 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size4K
Number of terminals63
word count67108864 words
character code64000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA63,10X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
page size512 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.05 mm
Department size16K
Maximum standby current0.00005 A
Maximum slew rate0.015 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeSLC NAND TYPE
width9 mm

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