GVT1256DA18T-4 datasheet, PDF - EEWORLD Datasheet

GVT1256DA18T-4: DescriptionApplication Specific SRAM, 256KX18, 2.5ns, CMOS, PQFP100; Categorystorage storage; File Size293KB，24 Pages; ManufacturerCypress Semiconductor

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GVT1256DA18T-4 Overview

Application Specific SRAM, 256KX18, 2.5ns, CMOS, PQFP100

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	compliant
Maximum access time	2.5 ns
Maximum clock frequency (fCLK)	250 MHz
I/O type	COMMON
JESD-30 code	R-PQFP-G100
JESD-609 code	e0
memory density	4718592 bit
Memory IC Type	APPLICATION SPECIFIC SRAM
memory width	18
Number of terminals	100
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX18
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	QFP
Encapsulate equivalent code	QFP100,.63X.87
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
Maximum standby current	0.02 A
Minimum standby current	3.14 V
Maximum slew rate	0.45 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.635 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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