Standard SRAM, 256X4, 25ns, CMOS, CDIP22, 0.400 INCH, CERDIP-22
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Parts packaging code | DIP |
package instruction | DIP, DIP22,.4 |
Contacts | 22 |
Reach Compliance Code | not_compliant |
ECCN code | 3A001.A.2.C |
Maximum access time | 25 ns |
JESD-30 code | R-GDIP-T22 |
JESD-609 code | e0 |
length | 27.432 mm |
memory density | 1024 bit |
Memory IC Type | STANDARD SRAM |
memory width | 4 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 22 |
word count | 256 words |
character code | 256 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -55 °C |
organize | 256X4 |
Output characteristics | 3-STATE |
Exportable | YES |
Package body material | CERAMIC, GLASS-SEALED |
encapsulated code | DIP |
Encapsulate equivalent code | DIP22,.4 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
power supply | 5 V |
Certification status | Not Qualified |
Filter level | 38535Q/M;38534H;883B |
Maximum seat height | 5.08 mm |
Maximum standby current | 0.09 A |
Minimum standby current | 4.5 V |
Maximum slew rate | 0.09 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | MILITARY |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
width | 10.16 mm |
Base Number Matches | 1 |