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R325CH10CHO

Description
Silicon Controlled Rectifier, 1852.6A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element
CategoryAnalog mixed-signal IC    Trigger device   
File Size146KB,2 Pages
ManufacturerIXYS
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R325CH10CHO Overview

Silicon Controlled Rectifier, 1852.6A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element

R325CH10CHO Parametric

Parameter NameAttribute value
package instructionDISK BUTTON, O-CEDB-N2
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Nominal circuit commutation break time30 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage20 V/us
Maximum DC gate trigger current300 mA
Maximum DC gate trigger voltage3 V
JESD-30 codeO-CEDB-N2
Number of components1
Number of terminals2
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current1852.6 A
Maximum repetitive peak off-state leakage current150000 µA
Off-state repetitive peak voltage1000 V
Repeated peak reverse voltage1000 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Trigger device typeSCR
Base Number Matches1

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