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NX8563LB501

Description
LASER DIODE W/MONITOR,1.55UM PEAK WAVELENGTH,MODULE-BF
CategoryLED optoelectronic/LED    photoelectric   
File Size72KB,12 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

NX8563LB501 Overview

LASER DIODE W/MONITOR,1.55UM PEAK WAVELENGTH,MODULE-BF

NX8563LB501 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Maximum forward current0.3 A
Maximum forward voltage1.5 V
Installation featuresSURFACE MOUNT
Maximum operating temperature65 °C
Minimum operating temperature-20 °C
Optoelectronic device typesLASER DIODE
peak wavelength1550 nm
Semiconductor materialInGaAs
surface mountYES
Base Number Matches1
DATA SHEET
LASER DIODE
NX8563LB
1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE
CW LIGHT SOURCE FOR DWDM APPLICATIONS
DESCRIPTION
The NX8563LB is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode
module with Polarization Maintain Fiber (PMF).
It is designed as Continuous Wave (CW) light source and ideal for optical transmission systems with external
modulators. The device is available for Dense Wavelength Division Multiplexing (DWDM) wavelengths based on
ITU-T recommendations, enabling a wide range of applications.
FEATURES
• Output power
P
f
= 10 mW MIN.
• Available for DWDM wavelengths based on ITU-T recommendations
(100 GHz grid, refer to the ORDERING INFORMATION)
• Internal thermo-electric cooler and isolator
• Hermetically sealed 14-pin butterfly package
• Polarization maintain fiber pigtail
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P13642EJ5V0DS00 (5th edition)
Date Published April 2001 NS CP(K)
Printed in Japan
The mark
shows major revised points.
©
1997, 2001

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