TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-72, FET RF Small Signal
Parameter Name | Attribute value |
package instruction | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Shell connection | SUBSTRATE |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 30 V |
Maximum drain current (ID) | 0.02 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
Maximum feedback capacitance (Crss) | 0.7 pF |
highest frequency band | VERY HIGH FREQUENCY BAND |
JEDEC-95 code | TO-72 |
JESD-30 code | O-MBCY-W3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | DEPLETION MODE |
Maximum operating temperature | 125 °C |
Package body material | METAL |
Package shape | ROUND |
Package form | CYLINDRICAL |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | WIRE |
Terminal location | BOTTOM |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |
Base Number Matches | 1 |
BFR29 | BSV81 | BSD214 | BSD215 | BSD212 | BSD213 | BSD12 | |
---|---|---|---|---|---|---|---|
Description | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-72, FET RF Small Signal | TRANSISTOR 25 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72, FET General Purpose Small Signal | TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72, FET General Purpose Small Signal | TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72, FET General Purpose Small Signal | TRANSISTOR 50 mA, 10 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72, FET General Purpose Small Signal | TRANSISTOR 50 mA, 10 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72, FET General Purpose Small Signal | TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72, FET General Purpose Small Signal |
package instruction | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Shell connection | SUBSTRATE | SUBSTRATE | SUBSTRATE | SUBSTRATE | SUBSTRATE | SUBSTRATE | SUBSTRATE |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE WITH BUILT-IN DIODE | SINGLE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 30 V | 30 V | 20 V | 20 V | 10 V | 10 V | 20 V |
Maximum drain current (ID) | 0.02 A | 0.025 A | 0.05 A | 0.05 A | 0.05 A | 0.05 A | 0.05 A |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-72 | TO-72 | TO-72 | TO-72 | TO-72 | TO-72 | TO-72 |
JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
Operating mode | DEPLETION MODE | DEPLETION MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | DEPLETION MODE |
Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
Package body material | METAL | METAL | METAL | METAL | METAL | METAL | METAL |
Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO | NO | NO | NO | NO |
Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
transistor applications | AMPLIFIER | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Maximum drain-source on-resistance | - | 50 Ω | 45 Ω | 45 Ω | 45 Ω | 45 Ω | 30 Ω |
Maker | - | - | NXP | NXP | NXP | NXP | NXP |