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BFR29

Description
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-72, FET RF Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size21KB,1 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BFR29 Overview

TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-72, FET RF Small Signal

BFR29 Parametric

Parameter NameAttribute value
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionSUBSTRATE
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)0.02 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.7 pF
highest frequency bandVERY HIGH FREQUENCY BAND
JEDEC-95 codeTO-72
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature125 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1

BFR29 Related Products

BFR29 BSV81 BSD214 BSD215 BSD212 BSD213 BSD12
Description TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-72, FET RF Small Signal TRANSISTOR 25 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72, FET General Purpose Small Signal TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72, FET General Purpose Small Signal TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72, FET General Purpose Small Signal TRANSISTOR 50 mA, 10 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72, FET General Purpose Small Signal TRANSISTOR 50 mA, 10 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72, FET General Purpose Small Signal TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72, FET General Purpose Small Signal
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection SUBSTRATE SUBSTRATE SUBSTRATE SUBSTRATE SUBSTRATE SUBSTRATE SUBSTRATE
Configuration SINGLE SINGLE SINGLE SINGLE WITH BUILT-IN DIODE SINGLE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V 20 V 20 V 10 V 10 V 20 V
Maximum drain current (ID) 0.02 A 0.025 A 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-72 TO-72 TO-72 TO-72 TO-72 TO-72 TO-72
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
Number of components 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE DEPLETION MODE
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Package body material METAL METAL METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Maximum drain-source on-resistance - 50 Ω 45 Ω 45 Ω 45 Ω 45 Ω 30 Ω
Maker - - NXP NXP NXP NXP NXP
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