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PN4356APM

Description
Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
CategoryDiscrete semiconductor    The transistor   
File Size65KB,1 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

PN4356APM Overview

Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,

PN4356APM Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Reach Compliance Codenot_compliant
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Maximum off time (toff)400 ns
Base Number Matches1

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