AS7C33512NTD18A-166HTQI datasheet, PDF

AS7C33512NTD18A-166HTQI: DescriptionZBT SRAM, 512KX18, 9ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100; Categorystorage storage; File Size300KB，12 Pages; ManufacturerIntegrated Silicon Solution ( ISSI )

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AS7C33512NTD18A-166HTQI Overview

ZBT SRAM, 512KX18, 9ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	QFP
package instruction	LQFP,
Contacts	100
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	9 ns
JESD-30 code	R-PQFP-G100
JESD-609 code	e0
length	20 mm
memory density	9437184 bit
Memory IC Type	ZBT SRAM
memory width	18
Number of functions	1
Number of terminals	100
word count	524288 words
character code	512000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX18
Package body material	PLASTIC/EPOXY
encapsulated code	LQFP
Package shape	RECTANGULAR
Package form	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	1.6 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
width	14 mm
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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