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M58WR032QT70ZB6F

Description
16 Mbit and 32 Mbit (x16, Multiple Bank, Burst) 1.8V supply Flash memories
Categorystorage    storage   
File Size2MB,110 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
Download Datasheet Parametric View All

M58WR032QT70ZB6F Overview

16 Mbit and 32 Mbit (x16, Multiple Bank, Burst) 1.8V supply Flash memories

M58WR032QT70ZB6F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instructionVFBGA, BGA56,7X8,30
Contacts56
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time70 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
startup blockTOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B56
JESD-609 codee1
length9 mm
memory density33554432 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size8,63
Number of terminals56
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Encapsulate equivalent codeBGA56,7X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
page size4 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8,1.8/2 V
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1 mm
Department size4K,32K
Maximum standby current0.00005 A
Maximum slew rate0.045 mA
Maximum supply voltage (Vsup)2 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNOR TYPE
width7.7 mm
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