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M58BW16FB4ZA3T

Description
512K X 32 FLASH 3.3V PROM, 45 ns, PQFP80
Categorystorage    storage   
File Size1MB,87 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

M58BW16FB4ZA3T Overview

512K X 32 FLASH 3.3V PROM, 45 ns, PQFP80

M58BW16FB4ZA3T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instruction10 X 12 MM, 1 MM PITCH, LBGA-80
Contacts80
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time45 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B80
length12 mm
memory density16777216 bi
Memory IC TypeFLASH
memory width32
Number of functions1
Number of departments/size8,31
Number of terminals80
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize512KX32
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA80,8X10,40
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
power supply2.5/3.3,3/3.3 V
Programming voltage3.3 V
Certification statusNot Qualified
Maximum seat height1.6 mm
Department size2K,16K
Maximum standby current0.00015 A
Maximum slew rate0.05 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
switch bitNO
typeNOR TYPE
width10 mm
M58BW16F
M58BW32F
16 or 32 Mbit (x 32, boot block, burst)
3.3 V supply Flash memories
Preliminary Data
Features
Supply voltage
– V
DD
= 2.7 V to 3.6 V (45 ns) or
V
DD
= 2.5 V to 3.3 V (55 ns)
– V
DDQ
= V
DDQIN
= 2.4 V to 3.6 V for I/O
buffers
High performance
– Access times: 45 and 55 ns
– Synchronous burst reads
– 75 MHz effective zero wait-state burst read
– Asynchronous page reads
M58BW32F memory organization:
– Eight 64 Kbit small parameter blocks
– Four 128 Kbit large parameter blocks
– Sixty-two 512 Kbit main blocks
M58BW16F memory organization:
– Eight 64 Kbit parameter blocks
– Thirty-one 512 Kbit main blocks
Hardware block protection
– WP pin to protect any block combination
from Program and Erase operations
– PEN signal for Program/Erase Enable
Irreversible modify protection (OTP like) on
128 Kbits:
– Block 1 (bottom device) or block 72 (top
device) in the M58BW32F
– Blocks 2 and 3 (bottom device) or blocks 36
and 35 (top device) in the M58BW16F
Security
– 64-bit unique device identifier (UID)
Fast programming
– Write to buffer and program capability
Optimized for FDI drivers
– Common Flash interface (CFI)
– Fast Program/Erase Suspend feature in
each block
Low power consumption
– 100 µA typical Standby current
PQFP80 (T)
LBGA
LBGA80 (ZA)
10 x 8 ball array
Electronic signature
– Manufacturer code: 0020h
– Top device codes:
M58BW32FT: 8838h
M58BW16FT: 883Ah
– Bottom device codes:
M58BW32FB: 8837h
M58BW16FB: 8839h
Automotive device grade 3:
– Temperature:
40 to 125 °C
– Automotive grade certified
March 2008
Rev 5
1/87
www.numonyx.com
1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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