AO3424
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3424/L uses advanced trench technology to
provide excellent R
DS(ON)
, very low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
AO3424 and AO3424L are electrically
identical.
-RoHS Compliant
-AO3424L is Halogen Free
Features
V
DS
(V) = 30V
I
D
= 2 A
(V
GS
= 10V)
R
DS(ON)
< 80mΩ (V
GS
= 10V)
R
DS(ON)
< 95mΩ (V
GS
= 4.5V)
R
DS(ON)
< 157mΩ (V
GS
= 2.5V)
TO-236
(SOT-23)
Top View
G
D
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
30
±12
2
2
8
1.4
0.9
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
F
F
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
A
A
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
70
100
63
Max
90
125
80
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO3424
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=2A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=4.5V, I
D
=2A
V
GS
=2.5V, I
D
=1A
g
FS
V
SD
I
S
Forward Transconductance
V
DS
=5V, I
D
=2A
Diode Forward Voltage
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
1
8
67
97
76
121
11.7
0.8
1
1.8
226
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
39
29
1.4
2.6
V
GS
=4.5V, V
DS
=15V, I
D
=2A
1.3
0.5
2.6
V
GS
=10V, V
DS
=15V, R
L
=7.5Ω,
R
GEN
=6Ω
I
F
=2A, dI/dt=100A/µs
3.2
14.5
2.1
10.2
3.8
4
5
22
3
13
5
4
3.2
270
80
116
95
157
1.45
Min
30
0.001
1
5
100
1.8
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=2A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
F. The maximum current rating is limited by bond-wires.
Rev 2 : May 2008
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10V
12
3.5V
4V
6V
9
I
D
(A)
I
D
(A)
3V
6
10
8
V
DS
=5V
6
V
GS
=2.5V
3
4
125°C
2
25°C
0
0
1
2
3
4
V
DS
(Volts)
Fig 1: On-Region Characteristics
5
0
0
0.5
1.5
2
2.5
3
V
GS
(Volts)
Figure 2: Transfer Characteristics
1
3.5
200
175
150
R
DS(ON)
(m
Ω
)
125
100
75
50
25
0
0
2
4
6
8
10
V
GS
=10V
V
GS
=4.5V
V
GS
=2.5V
1.8
V
GS
=4.5V
I
D
=2A
270
Normalized On-Resistance
1.6
1.7
VGS=10V
3.6
I
D
=2A
1.4
1.2
VGS=2.5
I
D
=1A
1
0.8
0
25
50
75
100
125
13
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
150
140
130
120
R
DS(ON)
(m
Ω
)
110
100
90
80
70
60
50
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
I
D
=2A
1.0E+01
1.0E+00
1.0E-01
I
S
(A)
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°C
25°C
Alpha & Omega Semiconductor, Ltd.
AO3424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V
DS
=15V
I
D
=2A
Capacitance (pF)
400
350
300
250
200
150
100
50
0
0
2
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1
3
0
0
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
oss
C
rss
C
iss
4
V
GS
(Volts)
3
2
1
10.0
R
DS(ON)
limited
I
D
(Amps)
1s
1.0
10s
1ms
10ms
DC
T
J(Max)
=150°C
T
A
=25°C
0.1
0.1
1
10
100
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0.1s
10µs
100µs
Power (W)
270
20
T
J(Max)
=150°C
T
A
=25°C
1.7
3.6
15
10
5
0
0.001
13
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
100
1000
Alpha & Omega Semiconductor, Ltd.
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