7MBR150VR060-50 datasheet, PDF

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7MBR150VR060-50: DescriptionInsulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, COMPACT PACKAGE-43; CategoryDiscrete semiconductor The transistor; File Size807KB，8 Pages; ManufacturerFuji Electric Co., Ltd.; Environmental Compliance

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7MBR150VR060-50 Overview

Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, COMPACT PACKAGE-43

7MBR150VR060-50 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	FLANGE MOUNT, R-XUFM-X21
Contacts	43
Reach Compliance Code	unknown
Shell connection	ISOLATED
Maximum collector current (IC)	150 A
Collector-emitter maximum voltage	600 V
Configuration	COMPLEX
Gate-emitter maximum voltage	20 V
JESD-30 code	R-XUFM-X21
Number of components	7
Number of terminals	21
Maximum operating temperature	125 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	485 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	520 ns
Nominal on time (ton)	360 ns
VCEsat-Max	2.7 V
Base Number Matches	1

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7MBR150VR060-50

IGBT MODULE (V series)

600V / 150A / PIM

Features

Low V

(sat)

Compact Package

P.C.Board Mount Module

Converter Diode Bridge Dynamic Brake Circuit

RoHS compliant product

IGBT Modules

Applications

Inverter for Motor Drive

AC and DC Servo Drive Amplifier

Uninterruptible Power Supply

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)

Items

Collector-Emitter voltage

Gate-Emitter voltage

Inverter

Collector current

Collector power dissipation

Collector-Emitter voltage

Gate-Emitter voltage

Brake

Collector current

Collector power dissipation

Repetitive peak reverse voltage (Diode)

Repetitive peak reverse voltage

Average output current

Surge current (Non-Repetitive)

t (Non-Repetitive)

Symbols

CES

GES

Icp

-Ic

-Ic pulse

CES

GES

VRRM

FSM

Tjop

Tstg

AC : 1min.

Conditions

Maximum

ratings

600

±20

150

300

150

300

485

600

±20

150

300

600

800

150

700

2450

175

150

125

-40 to +125

2500

3.5

Units

Continuous

1ms

1 device

Tc=80°C

Continuous

1ms

1 device

Tc=80°C

Converter

50Hz/60Hz, sine wave

10ms, Tj=150°C

half sine wave

Inverter, Brake

Converter

Inverter, Brake

Converter

Junction temperature

Operating junciton temperature

(under switching conditions)

Case temperature

Storage temperature

Isolation voltage

Screw torque

°C

between terminal and copper base (*1)

iso

between thermistor and others (*2)

Mounting (*3)

VAC

Note *1: All terminals should be connected together during the test.

Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.

Note *3: Recommendable value : 2.5-3.5 Nm (M5)

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