SDT69513 datasheet, PDF - EEWORLD Datasheet

SDT69513: DescriptionPower Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, Metal, 3 Pin,; CategoryDiscrete semiconductor The transistor; File Size1MB，21 Pages; ManufacturerSolitron Devices Inc.

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SDT69513 Overview

Power Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, Metal, 3 Pin,

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power consumption environment	7 W
Maximum power dissipation(Abs)	7 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	25 MHz
VCEsat-Max	0.35 V
Base Number Matches	1

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