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C-IXTD20N55

Description
Power Field-Effect Transistor, 550V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size180KB,1 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

C-IXTD20N55 Overview

Power Field-Effect Transistor, 550V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

C-IXTD20N55 Parametric

Parameter NameAttribute value
package instructionUNCASED CHIP, R-XUUC-N2
Reach Compliance Codeunknown
ConfigurationSINGLE
Minimum drain-source breakdown voltage550 V
Maximum drain-source on-resistance0.35 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUUC-N2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Transistor component materialsSILICON
Base Number Matches1
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