Stanford Microdevices’ SHF-0589 series is a high performance
GaAs Heterostructure FET housed in a low-cost surface-mount
plastic package. HFET technology improves breakdown voltage
while minimizing Schottky leakage current for higher power added
efficiency and improved linearity.
Output power at 1dB compression for the SHF-0589 is +34dBm
when biased for Class AB operation at 8V and 500mA. The
+45 dBm third order intercept makes it ideal for high dynamic
range, high intercept point requirements. They are well suited
for use in both analog and digital wireless communication
infrastructure and subscriber equipment including cellular PCS,
CDPD, wireless data, and pagers.
Adequate heat sinking must be provided for this part to avoid ex-
ceeding the maximum junction temperature. Methods include the
use of screws near the device, and filled vias beneath the part to
the ground plane. Refer to “Mounting and Thermal
Considerations” section on page 7 for more information.
Maximum Available Gain vs. Frequency
Vds = 8.0 volts, Idq = 500 mA
SHF-0589
DC-3 GHz, 2.0 Watt GaAs
HFET
Product Features
•
Patented GaAs Heterostructure FET
Technology
35
30
25
20
15
10
5
0
0.1
G
max
(dB)
•
+34 dBm Output Power at 1 dB Compression
•
+45 dBm Output IP3
•
High Drain Efficiency: Up to 50% at Class AB
•
15 dB Gain at 900 MHz (Application circuit)
•
11 dB Gain at 1900 MHz (Application circuit)
Applications
•
Analog and Digital Wireless System
•
Cellular PCS, CDPD, Wireless Data, Pagers
0.8
1.5
2.2
2.9
3.6
4.3
Frequency (GHz)
Electrical Specifications at Ta = 25
°
C
Symbol
Parameters: Test Conditions
Units
Min.
Typ.
Max.
| S
21
|
2
G
max
TOIP
I
Insertion Power Gain
Vds = 8.0V, I dq= 500 mA, Z
S
=Z
L
=50 Ohms
Maximum Available Gain
Vds = 8.0V, I dq= 500 mA, Z
S
=Z
S OPT
, Z
L
=Z
L OPT
Output Third Order Intercept Point
(Device is tuned for maximum power output)
Saturated Drain Current
Vds = 3.0V, Vgs= 0V
Tranconductance:
Vds = 3.0V, Vgs = 0V
Pinch-Off Voltage:
Vds = 2.0V, I d = 2.4 mA
Gate-to-Source Breakdown Voltage, Igs = 4.8mA
Gate-to-Drain Breakdown Voltage, Igd = 4.8mA
Thermal Resistance, junction-to-lead
f = 0.9 GHz
f = 1.9 GHz
f = 0.9 GHz
f = 1.9 GHz
f = 0.9 GHz
f = 1.9 GHz
dB
dB
dBm
dBm
mA
mS
V
V
V
o
15.6
9.4
24
20
46
45
1176
792
-2.7
-1.9
-22
-22
21
-1.0
-17
-17
Dss
G
m
Vp
V
bgs
V
bgd
Rth
C/W
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101242 Rev -B
1
Preliminary
Preliminary
SHF-0589 DC-3GHz, 2 Watt GaAs HFET
Absolute Maximum Ratings
Notes:
1. Operation of this device above any one of these parameters
may cause permanent damage.
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current
Operating Temperature
RF Input Power
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
DS
T
OP
P
IN
T
CH
T
STG
Absolute
Maximum
+12V
-5V to 0V
IDSS
-45 C to +85° C
500 mW
+175° C
-65 to +150° C
Plot of I
D
vs. V
DS
for V
GS
= -2.25V to 0V
1.2
1
0.8
V
GS
= 0 v
V
GS
= - 0.25
V
GS
= - 0.5 v
V
GS
= - 0.75 v
V
GS
= - 1.0
I
D
(amps
)
0.6
0.4
0.2
0
0
2
V
GS
= - 1.25 v
V
GS
= - 1.50
V
GS
= - 1.75
V
GS
= - 2.0 v
V
GS
= - 2.25
4
6
8
10
V
DS
(Volts)
NOTE: I/V curves were taken using pulse sampling techniques. This
results in low duty cycle currents through the device and therefore
very low power levels. It is not recommended that these measurements
be taken in d.c. mode, as excessive current could result in damage to
the device.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101242 Rev-B
2
Preliminary
Preliminary
SHF-0589 DC-3GHz, 2 Watt GaAs HFET
S
21
& S
12
Versus Frequency
30
25
-25
-27
S
12
20
-29
-31
-33
S
12
(dB)
S
21
(dB)
15
-35
10
5
-41
0
0
1
2
3
4
5
-43
-37
-39
S
21
Frequency (GHz)
S11 &S22 vs. Frequency ( 0.1 to 4.5 GHz)
Typical s-parameters at 25
°
C (Vds = 8V, Ids = 500mA)
Freq(GHz )
|S11|
S11 Ang
S 21 d B
|S21|
S21 Ang
S 12 d B
|S12|
S12 Ang
|S22|
S22 Ang
0.05
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
3.0
3.5
4.0
4.5
0.98
0.97
0.92
0.90
0.89
0.89
0.89
0.89
0.89
0.89
0.88
0.89
0.88
0.88
0.87
0.88
0.89
0.90
-21.9
-40.0
-98.2
-127.9
-144.5
-155.5
-163.4
-169.5
-174.9
179.2
176.5
172.9
169.5
166.3
158.5
151.3
144.4
138.6
26.8
26.3
23.0
20.0
17.5
15.6
13.9
12.6
11.4
10.3
9.4
8.5
7.7
7.0
5.3
4.0
2.7
1.7
21.9
20.6
14.2
10.0
7.5
6.0
5.0
4.2
3.7
3.3
2.9
2.7
2.4
2.2
1.8
1.6
1.4
1.2
165.2
155.9
125.0
108.1
97.5
89.6
82.9
77.4
71.8
66.7
62.2
57.5
53.2
49.0
38.4
28.6
19.2
10.1
-40.1
-39.8
-33.1
-31.5
-31.1
-30.8
-30.7
-30.7
-30.6
-30.6
-30.7
-30.7
-30.7
-30.7
-30.8
-30.9
-30.9
-30.8
0.01
0.01
0.02
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
86.9
66.1
38.5
24.1
16.8
11.5
7.8
5.1
2.8
0.8
-1.6
-2.7
-4.1
-5.4
-7.8
-9.2
-10.0
-11.0
0.19
0.25
0.41
0.47
0.50
0.51
0.52
0.52
0.53
0.53
0.54
0.54
0.55
0.55
0.56
0.58
0.60
0.61
-149.3
-148.2
-155.7
-164.2
-169.5
-173.2
-176.0
-178.5
179.3
177.6
175.6
174.2
172.1
170.5
166.3
162.3
158.1
153.7
No external matching, Scattering parameters are de-embedded on test fixture to device
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