NDB406A datasheet, PDF - EEWORLD Datasheet

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NDB406A: Description15A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB; CategoryDiscrete semiconductor The transistor; File Size143KB，6 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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NDB406A Overview

15A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

NDB406A Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	15 A
Maximum drain-source on-resistance	0.1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	100 pF
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	50 W
Maximum pulsed drain current (IDM)	45 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	80 ns
Maximum opening time (tons)	120 ns
Base Number Matches	1

NDB406A Related Products

	NDB406A	NDB406B	NDP406B	NDP406A
Description	15A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	15A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V	60 V	60 V
Maximum drain current (ID)	15 A	12 A	12 A	15 A
Maximum drain-source on-resistance	0.1 Ω	0.15 Ω	0.15 Ω	0.1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	100 pF	100 pF	100 pF	100 pF
JEDEC-95 code	TO-263AB	TO-263AB	TO-220AB	TO-220AB
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1
Number of terminals	2	2	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	50 W	50 W	50 W	50 W
Maximum pulsed drain current (IDM)	45 A	36 A	36 A	45 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	NO	NO
Terminal form	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Maximum off time (toff)	80 ns	80 ns	80 ns	80 ns
Maximum opening time (tons)	120 ns	120 ns	120 ns	120 ns
Base Number Matches	1	1	1	-

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