Silicon Controlled Rectifier, 2307.9 A, 1800 V, SCR
Parameter Name | Attribute value |
package instruction | DISK BUTTON, O-CEDB-N2 |
Reach Compliance Code | unknown |
Other features | HIGH RELIABILITY |
Configuration | SINGLE |
Critical rise rate of minimum off-state voltage | 300 V/us |
Maximum DC gate trigger current | 300 mA |
Maximum DC gate trigger voltage | 3 V |
Maximum holding current | 1000 mA |
JESD-30 code | O-CEDB-N2 |
Maximum leakage current | 100 mA |
On-state non-repetitive peak current | 21500 A |
Number of components | 1 |
Number of terminals | 2 |
Maximum on-state current | 2490000 A |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -40 °C |
Package body material | CERAMIC, METAL-SEALED COFIRED |
Package shape | ROUND |
Package form | DISK BUTTON |
Certification status | Not Qualified |
Maximum rms on-state current | 2307.9 A |
Maximum repetitive peak off-state leakage current | 100000 µA |
Off-state repetitive peak voltage | 1800 V |
Repeated peak reverse voltage | 1800 V |
surface mount | YES |
Terminal form | NO LEAD |
Terminal location | END |
Trigger device type | SCR |
Base Number Matches | 1 |