EEWORLDEEWORLDEEWORLD

Part Number

Search

UG4D

Description
4 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size218KB,2 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
Download Datasheet View All

UG4D Online Shopping

Suppliers Part Number Price MOQ In stock  
UG4D - - View Buy Now

UG4D Overview

4 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD

UG4A THRU UG4D
ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage – 50 to 200 V
Forward Current – 4 A
Features
Ultrafast recovery time for high efficiency
Soft recovery characteristics
Excellent high temperature switching
Glass passivated junction
Mechanical Data
Case: Molded plastic, DO-201AD
Terminals: Plated axial leads, solderable per
MIL-STD-750, method 2026
Polarity: Color band denotes cathode end
Mounting position: Any
Absolute Maximum Ratings and Characteristics
Ratings at 25
O
C ambient temperature unless otherwise specified.
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375"(9.5 mm) Lead Length at T
L
= 75
O
C
Peak Forward Surge Current, 8.3 ms Single Half-sine-wave
Superimposed on rated load (JEDEC method) at T
L
= 75
O
C
Maximum Forward Voltage at 4 A
Maximum Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time
1)
Maximum Reverse Recovery Time
2)
T
J
= 25
O
C
T
J
= 100 C
O
DO-201AD
0.052(1.32)
0.048(1.22)
0.210(5.3)
0.190(4.8)
1.0 (25.4) MIN.
0.375(9.5)
0.285(7.2)
1.0 (25.4) MIN.
Dimensions in inches and (millimeters)
Symbols
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
T
A
= 25
O
C
T
A
= 100
O
C
I
R
t
rr
t
rr
Q
rr
C
J
R
θJA
T
J
, T
stg
UG4A
50
35
50
UG4B
100
70
100
4
150
UG4C
150
105
150
UG4D
200
140
200
Units
V
V
V
A
A
V
µA
ns
ns
nC
pF
O
0.95
5
300
20
30
50
15
30
20
25
-55 to +150
Maximum Recovered stored charge Time
2)
T
J
= 25
O
C
T
J
= 100
O
C
Typical Junction Capacitance
3)
Typical Thermal Resistance
4)
Operating Junction and Storage Temperature Range
1)
2)
C/W
O
C
Reverse recovery test conditions: I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A.
t
rr
and Q
rr
measured at tester: I
F
= 4 A, V
R
= 30 V, di/dt = 50 A/µs, I
rr
= 10% I
RM
for measurement of t
rr
.
3)
Measured at 1 MHz and applied reverse voltage of 4 V.
4)
Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length.
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Semtech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated : 26/04/2006 C

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号