Power Bipolar Transistor, 30A I(C), 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
package instruction | FLANGE MOUNT, R-PUFM-X7 |
Reach Compliance Code | compliant |
Shell connection | ISOLATED |
Maximum collector current (IC) | 30 A |
Configuration | COMPLEX |
Minimum DC current gain (hFE) | 100 |
Maximum landing time (tf) | 3000 ns |
JESD-30 code | R-PUFM-X7 |
JESD-609 code | e2 |
Number of components | 2 |
Number of terminals | 7 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | NPN |
Maximum power consumption environment | 500 W |
Maximum power dissipation(Abs) | 250 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Tin/Silver (Sn/Ag) |
Terminal form | UNSPECIFIED |
Terminal location | UPPER |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Maximum off time (toff) | 15000 ns |
Maximum opening time (tons) | 1500 ns |
VCEsat-Max | 2 V |
Base Number Matches | 1 |