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MCM94030L60

Description
4M X 9 FAST PAGE DRAM MODULE, 60 ns, SMA30, SIMM-30
Categorystorage    storage   
File Size390KB,12 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MCM94030L60 Overview

4M X 9 FAST PAGE DRAM MODULE, 60 ns, SMA30, SIMM-30

MCM94030L60 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeSIMM
package instruction, SIP30
Contacts30
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT
I/O typeCOMMON
JESD-30 codeR-XSMA-T30
JESD-609 codee0
memory density37748736 bit
Memory IC TypeFAST PAGE DRAM MODULE
memory width9
Number of functions1
Number of ports1
Number of terminals30
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX9
Output characteristics3-STATE
Package body materialUNSPECIFIED
Encapsulate equivalent codeSIP30
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
refresh cycle1024
Maximum seat height22.606 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

MCM94030L60 Related Products

MCM94030L60 MCM94000LH70 MCM94000LH60
Description 4M X 9 FAST PAGE DRAM MODULE, 60 ns, SMA30, SIMM-30 4MX9 FAST PAGE DRAM MODULE, 70ns, SMA30, SIMM-30 Fast Page DRAM Module, 4MX9, 60ns, CMOS, SIMM-30
Is it Rohs certified? incompatible incompatible incompatible
package instruction , SIP30 , SIP30 SIMM-30
Reach Compliance Code unknown unknown unknow
ECCN code EAR99 EAR99 EAR99
access mode FAST PAGE FAST PAGE FAST PAGE
Maximum access time 60 ns 70 ns 60 ns
Other features RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT
I/O type COMMON COMMON COMMON
JESD-30 code R-XSMA-T30 R-XSMA-T30 R-XSMA-T30
JESD-609 code e0 e0 e0
memory density 37748736 bit 37748736 bit 37748736 bi
Memory IC Type FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE
memory width 9 9 9
Number of functions 1 1 1
Number of ports 1 1 1
Number of terminals 30 30 30
word count 4194304 words 4194304 words 4194304 words
character code 4000000 4000000 4000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C
organize 4MX9 4MX9 4MX9
Output characteristics 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
Encapsulate equivalent code SIP30 SIP30 SIP30
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified
refresh cycle 1024 1024 1024
Maximum seat height 22.606 mm 13.208 mm 13.208 mm
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V
surface mount NO NO NO
technology CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Is it lead-free? Contains lead Contains lead -
Parts packaging code SIMM SIMM -
Contacts 30 30 -
Maker - Motorola ( NXP ) Motorola ( NXP )
Maximum standby current - 0.009 A 0.009 A
Maximum slew rate - 0.9 mA 1.08 mA
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