Philips Semiconductors
Product specification
TrenchMOS/ Schottky diode array
Three phase brushless d.c. motor driver
FEATURES
• Schottky diode across each
MOSFET
• Low on-state resistance
• Fast switching
• Logic level compatible
• Surface mount package
PHN603S
SYMBOL
D4
QUICK REFERENCE DATA
V
DS
= 25 V
G6
D1
G5
D2
G4
D3
I
D
= 5.5 A
R
DS(ON)
≤
35 mΩ (V
GS
= 10 V)
R
DS(ON)
≤
55 mΩ (V
GS
= 4.5 V)
S3
G1
S1
G2
S2
G3
GENERAL DESCRIPTION
Six n-channel, enhancement
mode, logic level, field-effect
power transistors and six schottky
diodes configured as three
half-bridges. This device has low
on-state resistance and fast
switching.
The
intended
application is in computer disk and
tape drives as a three phase
brushless d.c. motor driver.
The PHN603S is supplied in the
SOT137-1
(SO24)
surface
mounting package.
PINNING
PIN
1,4
2
3
5,8
6
7
9,12
10
11
13
14-16, 18-20, 22-24
17
21
DESCRIPTION
drain 1
source 1
gate 1
drain 2
source 2
gate 2
drain 3
source 3
gate 3
gate 4
drain 4
gate 5
gate 6
SOT137-1 (SO24)
Top view
1
24
12
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
P
tot
T
stg
, T
j
PARAMETER
Repetitive peak drain-source
voltage
Continuous drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current per device (DC)
Drain current per device (pulse
peak value)
Total power dissipation per device
Total power dissipation all devices
conducting
Storage & operating temperature
CONDITIONS
T
j
= 25 ˚C to 150˚C
T
j
≤
80 ˚C
1
R
GS
= 20 kΩ
T
a
= 25 ˚C
T
a
= 100 ˚C
T
a
= 25 ˚C
T
a
= 25 ˚C
T
a
= 100 ˚C
T
a
= 25 ˚C
T
a
= 100 ˚C
MIN.
-
-
-
-
-
-
-
-
-
-
-
- 55
MAX.
25
25
25
±
20
5.5
3.5
22
1.67
0.67
2.78
1.11
150
UNIT
V
V
V
V
A
A
A
W
W
W
W
˚C
1
The maximum permissible junction temperature prior to application of continuous drain-source voltage is limited
by thermal runaway.
October 1998
1
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS/ Schottky diode array
Three phase brushless d.c. motor driver
THERMAL RESISTANCES
SYMBOL
R
th j-a
PARAMETER
Thermal resistance junction to
ambient
CONDITIONS
FR4 board, minimum
footprint
Per device
All devices conducting
TYP.
MAX.
PHN603S
UNIT
75
42
-
-
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
V
GS(TO)
R
DS(ON)
I
GSS
I
DSS
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
C
iss
C
oss
C
rss
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 1 mA
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 150˚C
V
GS
= 10 V; I
D
= 5 A
V
GS
= 4.5 V; I
D
= 2.5 A
V
GS
= 10 V; I
D
= 5 A; T
j
= 150˚C
Gate source leakage current V
GS
=
±20
V; V
DS
= 0 V
Zero gate voltage drain
V
DS
= 25 V; V
GS
= 0 V;
current
T
j
= 100˚C
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Input capacitance
Output capacitance
Feedback capacitance
I
D
= 1 A; V
DD
= 20 V; V
GS
= 10 V
MIN.
25
1.0
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
1.8
-
30
50
50
10
0.2
5
17
1.7
5.2
8
11
31
17
650
320
130
-
-
-
35
55
60
100
1.0
10
-
-
-
-
-
-
-
-
-
-
V
V
V
mΩ
mΩ
mΩ
nA
mA
mA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
DD
= 20 V; I
D
= 1 A;
V
GS
= 10 V; R
G
= 6
Ω
Resistive load
V
GS
= 0 V; V
DS
= 20 V; f = 1 MHz
SCHOTTKY DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL
I
F
I
FRM
V
F
t
rr
PARAMETER
Continuous forward diode
current
Repetitive peak forward diode
current
Diode forward voltage
Reverse recovery time
CONDITIONS
T
a
= 25 ˚C
MIN.
-
-
I
F
= 2.5 A; V
GS
= 0 V
I
F
= 2.5 A; V
GS
= 0 V, T
j
= 100 ˚C
I
F
= 0.5 A to I
R
= 0.5 A
-
-
-
TYP.
-
-
0.4
0.3
20
MAX.
5.5
22
0.6
0.55
-
UNIT
A
A
V
V
ns
October 1998
2
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS/ Schottky diode array
Three phase brushless d.c. motor driver
PHN603S
Normalised Power Dissipation, PD (%)
120
100
10
80
60
40
20
0
0
25
50
75
100
125
150
Ambient Temperature, Ta (C)
0.1
1
100
Transient Thermal Impedance, Zth j-a (K/W)
D = 0.5
0.2
0.1
0.05
0.02
MOSFET
P
D
Single pulse
tp
D = tp/T
T
0.01
1E-06
1E-05
1E-04
1E-03 1E-02 1E-01
pulse width, tp (s)
1E+00
t
1E+01
Fig.1. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25 ˚C
= f(T
a
)
Fig.4. Transient thermal impedance; MOSFET.
Z
th j-a
= f(t); parameter D = t
p
/T
Normalised Drain Current, ID (%)
120
100
10
80
60
40
20
0
0
25
50
75
100
125
150
Ambient Temperature, Ta (C)
0.1
1
100
Transient Thermal Impedance, Zth j-a (K/W)
SCHOTTKY
Single pulse
P
D
tp
t
0.01
1E-06
1E-05
1E-04
1E-03 1E-02 1E-01
pulse width, tp (s)
1E+00
1E+01
Fig.2. Normalised continuous drain current.
ID% = 100
⋅
I
D
/I
D 25 ˚C
= f(T
a
); conditions: V
GS
≥
4.5 V
Fig.5. Transient thermal impedance; Schottky Diode.
Z
th j-a
= f(t)
junctions
100
Peak Pulsed Drain Current, IDM (A)
RDS(on) = VDS/ ID
PHN603S
40K/W
40K/W
tp = 100 us
Rth j-b
10
1 ms
10 ms
1
d.c.
0.1
100 ms
6 PAIRS
MOSFET
SCHOTTKY
board
MOSFET
40K/W
Rth b-a
0.01
0.1
1
10
Drain-Source Voltage, VDS (V)
100
ambient
Fig.3. Safe operating area. T
a
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.6. Thermal model; typical values.
R
th j-b
and R
th b-a
October 1998
3
35K/W
40K/W
SCHOTTKY
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS/ Schottky diode array
Three phase brushless d.c. motor driver
PHN603S
Drain Current, ID (A)
5
4
10V
PHN603S
VGS = 3.4 V
Tj = 25 C
3.2 V
10
9
8
7
6
5
4
3
2
1
0
0
Transconductance, gfs (S)
VDS > ID X RDS(ON)
Tj = 25 C
PHN603S
4.5 V
150 C
3
2
1
2.4 V
0
0
1
2
3
4
Drain-Source Voltage, VDS (V)
5
2.6 V
3V
2.8 V
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Drain current, ID (A)
Fig.7. Typical output characteristics, T
j
= 25 ˚C.
I
D
= f(V
DS
); parameter V
GS
Fig.10. Typical transconductance, T
j
= 25 ˚C.
g
fs
= f(I
D
)
a
Drain-Source On Resistance, RDS(on) (Ohms)
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
1
2
3
Drain Current, ID (A)
4
2.8V
3V
3.2V
PHN603S
2
SOT223 30V Trench
Normalised RDS(ON) = f(Tj)
VGS = 3.4 V
1.5
Tj = 25 C
1
0.5
10V
4.5V
5
0
-50
0
50
Tj / C
100
150
Fig.8. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.11. Normalised drain-source on-state resistance.
R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
)
Drain current, ID (A)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
0.5
1
1.5
2
2.5
150 C
VDS > ID X RDS(ON)
PHN603S
5
VGS(TO) / V
PHN1013
4
3
typ.
2
Tj = 25 C
min.
1
3.5
3
Gate-source voltage, VGS (V)
0
-100
-50
0
50
Tj / C
100
150
200
Fig.9. Typical transfer characteristics.
I
D
= f(V
GS
)
Fig.12. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
October 1998
4
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS/ Schottky diode array
Three phase brushless d.c. motor driver
PHN603S
100mA
Drain current, ID (A)
Sub-Threshold Conduction
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Gate-source voltage, VGS (V)
ID = 1A
Tj = 25 C
VDD = 20 V
PHN603S
10mA
min
typ
1mA
100uA
10uA
VDS = VGS
Tj = 25 C
1uA
0
1
2
3
Gate-source voltage, VGS (V)
4
5
0
5
10
15
Gate charge, QG (nC)
20
25
Fig.13. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C
Fig.15. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
)
Source-Drain Diode Current, IF (A)
Capacitances, Ciss, Coss, Crss (pF)
10000
PHN603S
5
4.5
4
3.5
3
2.5
1000
Ciss
Coss
Crss
100
0.1
1
10
Drain-Source Voltage, VDS (V)
100
2
1.5
1
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
150 C
Tj = 25 C
VGS = 0 V
PHN603S
0.7
0.8
Drain-Source Voltage, VSDS (V)
Fig.14. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.16. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
October 1998
5
Rev 1.000
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