http://www.fujielectric.com/products/semiconductor/
7MBP200VDN060-50
IGBT MODULE (V series)
600V / 200A / IPM
Features
• Temperature protection provided by directly detecting
the junction temperature of the IGBTs
• owpowerlossandsoftswitching
L
• ighperformanceandhighreliabilityIGBTwithoverheating
H
protection
• igherreliabilitybecauseofabigdecreaseinnumberof
H
partsinbuilt-incontrolcircuit
IGBT Modules
Maximum Ratings and Characteristics
Absolute Maximum Ratings (T
C
=25ºC, V
CC
=15V unless otherwise specified)
Items
Collector-Emitter Voltage (*1)
Short Circuit Voltage
Collector Current
Collector Power Dissipation
Collector Current
DC
1ms
Duty=77.1% (*2)
1 device (*3)
DC
1ms
Inverter
Symbol
V
CES
V
SC
I
C
I
cp
-I
C
P
C
I
C
I
cp
I
F
P
C
V
CC
V
in
V
ALM
I
ALM
T
j
T
opr
T
stg
T
sol
V
iso
-
Min.
0
200
-
-
-
-
-
-
-
-
-0.5
-0.5
-0.5
-
-
-20
-40
-
-
-
Max.
600
400
200
400
200
694
100
200
100
403
20
V
CC
+0.5
V
CC
20
150
110
125
260
AC2500
1.7
Units
V
V
A
A
A
W
A
A
A
W
V
V
V
mA
ºC
ºC
ºC
ºC
Vrms
Nm
Note*1:V
CES
shallbeappliedtotheinputvoltagebetweenterminalP-(U,V,W,B)and(U,V,W,B)-N.
Note*2: uty=125ºC/R
th(j-c)D
/(I
F
×V
F
Max.)×100
D
Note*3:P
C
=125ºC/R
th(j-c)Q
(Inverter&Brake)
Note*4:V
CC
shallbeappliedtotheinputvoltagebetweenterminalNo.4and1,8and5,12and9,14and13.
Note*5:V
in
shallbeappliedtotheinputvoltagebetweenterminalNo.3and1,7and5,11and9,15~18and13.
Note*6:V
ALM
shallbeappliedtothevoltagebetweenterminalNo.2and1,6and5,10and9,19and13.
Note*7:I
ALM
shallbeappliedtotheinputcurrenttoterminalNo.2,6,10and19.
Note*8:Immersiontime10±1sec.1time.
Note*9:Terminaltobase,50/60Hzsinewave1min.Allterminalsshouldbeconnectedtogetherduringthetest.
Brake
Forward Current of Diode
Collector Power Dissipation 1 device (*3)
Supply Voltage of Pre-Driver (*4)
Input Signal Voltage (*5)
Alarm Signal Voltage (*6)
Alarm Signal Current (*7)
Junction Temperature
Operating Case Temperature
Storage Temperature
Solder Temperature (*8)
Isolating Voltage (*9)
Terminal (M4)
Screw Torque
Mounting (M4)
1
1557
APRIL2014
7MBP200VDN060-50
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
Electrical Characteristics (T
j
=25ºC, V
CC
=15V unless otherwise specified)
Items
Collector Current at off signal input
Inverter
Collector-Emitter saturation voltage
Forward voltage of FWD
Collector Current at off signal input
Brake
Collector-Emitter saturation voltage
Forward voltage of FWD
Symbol
I
CES
V
CE(sat)
V
F
I
CES
V
CE(sat)
V
F
t
on
t
off
t
rr
Supply current of P-side pre-driver (per one unit)
Supply current of N-side pre-driver
Input signal threshold voltage
Inverter
Brake
Over Current Protection Delay time
Short Circuit Protection Delay time
IGBT Chips Over Heating Protection Temperature Level
Over Heating Protection Hysteresis
Under Voltage Protection Level
Under Voltage Protection Hysteresis
Over Current Protection
Level
Alarm Signal Hold Time
Resistance for current limit
I
ccp
I
ccn
V
inth(on)
V
inth(off)
I
OC
t
dOC
t
SC
T
jOH
T
jH
V
UV
V
H
t
ALM(OC)
t
ALM(UV)
t
ALM(TjOH)
R
ALM
Conditions
V
CE
=600V
I
C
=200A
I
F
=200A
V
CE
=600V
I
C
=100A
I
F
=100A
Terminal
Chip
Terminal
Chip
Terminal
Chip
Terminal
Chip
Min.
-
-
-
-
-
-
-
-
-
-
1.1
-
-
-
-
1.2
1.5
300
150
-
-
150
-
11.0
0.2
1.0
2.5
5.0
960
Typ.
-
-
1.40
-
1.80
-
-
1.45
-
2.00
-
-
-
-
-
1.4
1.7
-
-
5
2
-
20
-
0.5
2.0
4.0
8.0
1265
Max.
1.0
2.35
-
2.70
-
1.0
2.05
-
2.40
-
-
2.1
0.3
24
93
1.6
1.9
-
-
-
3
-
-
12.5
-
2.4
4.9
11.0
1570
Units
mA
V
V
V
V
mA
V
V
V
V
µs
µs
µs
mA
mA
V
V
A
A
µs
µs
ºC
ºC
V
V
ms
ms
ms
Ω
Switching time
V
DC
=300V,T
j
=125ºC,
I
C
=200A
V
DC
=300V
I
F
=200A
SwitchingFrequency=0-15kHz
T
C
=-20~110ºC
Vin-GND
T
j
=125ºC
T
j
=125ºC
T
j
=125ºC
SurfaceofIGBTChips
ON
OFF
ALM-GND
T
C
=-20~110ºC
V
CC
10V
Thermal Characteristics (T
C
= 25ºC)
Items
Inverter
Junction to Case Thermal Resistance (*10)
Brake
Case to Fin Thermal Resistance with Compound
Note*10:For1device,themeasurementpointofthecaseisjustunderthechip.
IGBT
FWD
IGBT
FWD
Symbol
R
th(j-c)Q
R
th(j-c)D
R
th(j-c)Q
R
th(j-c)D
R
th(c-f)
Min.
-
-
-
-
-
Typ.
-
-
-
-
0.05
Max.
0.18
0.30
0.31
0.60
-
Units
°C/W
°C/W
°C/W
°C/W
°C/W
Noise Immunity (V
DC
=300V, V
CC
=15V)
Items
Common mode rectangular noise
Conditions
Pulsewidth1μs,polarity±, 10min.
Judge:noover-current,nomissoperating
Min.
±2.0
Typ.
-
Max.
-
Units
kV
Recommended Operating Conditions
Items
DC Bus Voltage
Power Supply Voltage of Pre-Driver
Switching frequency of IPM
Arm shoot through blocking time for IPM's input signal
Screw Torque (M4)
Symbol
V
DC
V
CC
f
SW
t
dead
-
Min.
-
13.5
-
1.0
1.3
Typ.
-
15.0
-
-
-
Max.
400
16.5
20
-
1.7
Units
V
V
kHz
µs
Nm
Weight
Items
Weight
Symbol
Wt
Min.
-
Typ.
290
Max.
-
Units
g
2
7MBP200VDN060-50
Block Diagram
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
VccU
④
VinU
③
ALMU
②
GNDU
①
VccV
⑧
VinV
⑦
ALM V
⑥
GNDV
⑤
VccW
⑫
VinW
⑪
ALM W
⑩
GNDW
⑨
Vcc
⑭
VinX
⑯
Pre-Driver
Pre-Driver
R
ALM
Pre-Driver
R
ALM
R
ALM
Pre-Driver
P
U
V
W
GND
⑬
VinY
⑰
Pre-Driver
VinZ
⑱
Pre-Driver
B
VinDB
⑮
Pre-Driver
ALM
⑲
R
ALM
Pre-drivers include following functions
1.
Amplifier for driver
2.
Short circuit protection
3.
Under voltage lockout circuit
4.
Over current protection
5.
IGBT chip over heating protection
N
3
7MBP200VDN060-50
Characteristics (Representative)
Power supply current vs. Switching frequency
T
j
=25ºC (typ.)
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
Input signal threshold voltage
vs. Power supply voltage (typ.)
160
Power supply current : I
CC
[ mA ]
140
120
100
80
60
40
20
0
0
5
N-side
P-side
V
cc
=17V
V
cc
=15V
V
cc
=13V
Input signal threshold voltage :
V
inth(on)
,V
inth(off)
[ V ]
3
2.5
2
V
inth(off)
T
C
=25½125℃
1.5
1
0.5
0
V
inth(on)
V
cc
=17V
V
cc
=15V
V
cc
=13V
10
15
20
25
12
13
14
15
16
17
18
Switchig frequency : f
sw
[kHz]
Power supply voltage : V
cc
[V]
Under voltage vs. Junction temperature (typ.)
Under voltage hysterisis
vs. Junction temperature (typ.)
15
Under voltage hysterisis : V
H
[V]
1
0.8
0.6
0.4
0.2
0
12
Under voltage : V
UV
[ V ]
9
6
3
0
0
20
40
60
80
100
120
140
0
50
100
150
Junction temperature : T
j
[ºC]
Junction temperature : T
j
[ºC]
Alarm hold time vs. Power supply voltage (typ.)
Over heating characteristics
T
jOH
,T
jH
vs. V
CC
(typ.)
10
8
Alarm hold time : t
ALM
[ msec ]
200
Over heating protection : T
jOH
[℃]
OH hysterisis : T
jH
[℃]
t
ALM(TjOH)
T
jOH
150
6
4
2
0
t
ALM(OC)
100
50
T
jH
12
13
14
15
16
17
18
0
12
13
14
15
16
17
18
Power supply voltage : V
cc
[V]
Power supply voltage : V
cc
[V]
4
7MBP200VDN060-50
Inverter
Collector current vs. Collector-Emitter voltage
T
j
=25
℃
[Chip] (typ.)
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
Collector current vs. Collector-Emitter voltage
T
j
=25
℃
[Terminal] (typ.)
400
350
Collector current : I
C
[ A ]
400
350
V
CC
=15V
V
CC
=17V
V
CC
=13V
Collector current : I
C
[ A ]
300
250
200
150
100
50
0
0
0.5
1
300
250
200
150
100
50
V
CC
=15V
V
CC
=17V
V
CC
=13V
1.5
2
2.5
3
3.5
0
0
0.5
1
1.5
2
2.5
3
3.5
Collector-Emitter voltage
：
V
CE
[ V ]
Collector-Emitter voltage
：
V
CE
[ V ]
Collector current vs. Collector-Emitter voltage
T
j
=125
℃
[Chip] (typ.)
400
350
300
Collector current : I
C
[ A ]
400
350
300
Collector current : I
C
[ A ]
Collector current vs. Collector-Emitter voltage
T
j
=125
℃
[Terminal] (typ.)
V
CC
=15V
V
CC
=17V
V
CC
=13V
V
CC
=15V
V
CC
=17V
V
CC
=13V
250
200
150
100
50
0
0
0.5
1
1.5
2
250
200
150
100
50
0
2.5
3
3.5
0
0.5
1
1.5
2
2.5
3
3.5
Collector-Emitter voltage
：
V
CE
[ V ]
Collector-Emitter voltage
：
V
CE
[ V ]
Forward current vs. Forward voltage
[Chip] (typ.)
Forward current vs. Forward voltage
[Terminal] (typ.)
400
350
Forward current : I
F
[ A ]
400
350
300
250
200
150
100
50
0
0
0.5
1
1.5
2
2.5
3
3.5
5
Forward voltage
：
V
F
[ V ]
300
Forward current : I
F
[ A ]
250
200
150
100
50
0
T
j
=125
℃
T
j
=25
℃
T
j
=125
℃
T
j
=25
℃
0
0.5
1
1.5
2
2.5
3
3.5
Forward voltage
：
V
F
[ V ]
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