MMBD1501/A / 1503/A / 1504/A / 1505/A
MMBD1501/A / 1503/A / 1504/A / 1505/A
3
3
Connection Diagrams
1501
3
3 1503
11
1
2
1
MMBD1501
MMBD1503
MMBD1504
MMBD1505
MARKING
11
MMBD1501A
13
MMBD1503A
14
MMBD1504A
15
MMBD1505A
A11
A13
A14
A15
2
1
1504 3
2NC
1
2
3 1505
SOT-23
1
2
1
2
Small Signal Diodes
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
200
200
1.0
2.0
-55 to +150
150
Units
V
mA
A
A
°C
°C
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
T
A
= 25°C unless otherwise noted
Parameter
Value
350
357
Units
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
Parameter
Breakdown Voltage
Forward Voltage
Test Conditions
I
R
= 5.0
µA
I
F
= 1.0 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 200 mA
I
F
= 300 mA
V
R
= 125 V
V
R
= 125 V, T
A
= 150°C
V
R
= 180 V
V
R
= 180 V, T
A
= 150°C
V
R
= 0, f = 1.0 MHz
Min
200
620
720
800
830
0.87
0.90
Max
720
830
890
930
1.1
1.15
1.0
3.0
10
5.0
4.0
Units
V
mV
mV
mV
mV
V
V
nA
µA
nA
µA
PF
I
R
Reverse Current
C
T
Total Capacitance
2001
Fairchild Semiconductor Corporation
MMBD1500 series, Rev. B2
MMBD1501/A / 1503/A / 1504/A / 1505/A
Small Signal Diode
(continued)
Typical Characteristics
325
T a= 25
°
C
3
T a = 2 5
°
C
R everse V olta ge, V
R
[V ]
300
R e ve rse C u rre nt, I [nA ]
3
5
10
20
30
50
100
R
2
275
1
250
0
R e ve rse C u rre n t, I
R
[u A ]
130
150
170
190
205
R e v e rs e V o lta g e , V
R
[V ]
Figure 1. Reverse Voltage vs Reverse Current
BV - 3.0 to 100 uA
Figure 2. Reverse Current vs Reverse Voltage
IR - 130 - 250 Volts
550
Ta= 25 C
°
800
Ta= 25
°
C
500
Forward Voltage, V
F
[mV]
750
Forward Voltage, V
F
[V]
700
650
450
600
400
550
350
1
2
3
Forward Current, I
F
[uA]
5
10
20
30
50
100
500
0.1
0.2
0.3
Forward Current, I
F
[mA]
0.5
1
2
3
5
10
Figure 3. Forward Voltage vs Forward Current
VF - 1 to 100 uA
Figure 4. Forward Roltage vs Forwad Current
VF - 0.1 to 10 mA
1.20
4.0
Ta= 25
°
C
1.15
Ta= 25
°
C
Total Capacitance [pF]
3.5
Forward Voltage, V
F
[V]
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
3.0
2.5
2.0
1.5
1.0
10
20
30
Forward Current, I
F
[mA]
50
100
200
300
500
0
2
4
6
8
10
12
14
Reverse Voltage [V]
Figure 5. Forward Voltage vs Forward Current
VF - 10 to 800 mA
Figure 6. Total Capacitance vs Reverse Voltage
VR - 0 to 15 V
MMBD1500 series, Rev. B2
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
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Rev. H4