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MMBD1501AS62Z

Description
Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size43KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

MMBD1501AS62Z Overview

Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon

MMBD1501AS62Z Parametric

Parameter NameAttribute value
MakerFairchild
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.35 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
MMBD1501/A / 1503/A / 1504/A / 1505/A
MMBD1501/A / 1503/A / 1504/A / 1505/A
3
3
Connection Diagrams
1501
3
3 1503
11
1
2
1
MMBD1501
MMBD1503
MMBD1504
MMBD1505
MARKING
11
MMBD1501A
13
MMBD1503A
14
MMBD1504A
15
MMBD1505A
A11
A13
A14
A15
2
1
1504 3
2NC
1
2
3 1505
SOT-23
1
2
1
2
Small Signal Diodes
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
200
200
1.0
2.0
-55 to +150
150
Units
V
mA
A
A
°C
°C
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
T
A
= 25°C unless otherwise noted
Parameter
Value
350
357
Units
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
Parameter
Breakdown Voltage
Forward Voltage
Test Conditions
I
R
= 5.0
µA
I
F
= 1.0 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 200 mA
I
F
= 300 mA
V
R
= 125 V
V
R
= 125 V, T
A
= 150°C
V
R
= 180 V
V
R
= 180 V, T
A
= 150°C
V
R
= 0, f = 1.0 MHz
Min
200
620
720
800
830
0.87
0.90
Max
720
830
890
930
1.1
1.15
1.0
3.0
10
5.0
4.0
Units
V
mV
mV
mV
mV
V
V
nA
µA
nA
µA
PF
I
R
Reverse Current
C
T
Total Capacitance
2001
Fairchild Semiconductor Corporation
MMBD1500 series, Rev. B2

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