Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, EPUK-3
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | International Rectifier （ Infineon ） |
| Parts packaging code | BUTTON |
| package instruction | DISK BUTTON, O-CEDB-N2 |
| Contacts | 2 |
| Reach Compliance Code | compliant |
| Other features | HIGH SPEED |
| Shell connection | ISOLATED |
| Nominal circuit commutation break time | 20 µs |
| Configuration | SINGLE |
| Maximum DC gate trigger current | 200 mA |
| Maximum DC gate trigger voltage | 3 V |
| Maximum holding current | 600 mA |
| JEDEC-95 code | TO-200AB |
| JESD-30 code | O-CEDB-N2 |
| JESD-609 code | e0 |
| Maximum leakage current | 50 mA |
| On-state non-repetitive peak current | 8000 A |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum on-state current | 620000 A |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -40 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | ROUND |
| Package form | DISK BUTTON |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Maximum rms on-state current | 1180 A |
| Maximum repetitive peak off-state leakage current | 50000 µA |
| Off-state repetitive peak voltage | 1000 V |
| Repeated peak reverse voltage | 1000 V |
| surface mount | YES |
| Terminal surface | TIN LEAD |
| Terminal form | NO LEAD |
| Terminal location | END |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Trigger device type | SCR |
| Base Number Matches | 1 |
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