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02011J4R7BAWTR

Description
CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 25 V, 0.0000047 uF, SURFACE MOUNT, 0402
CategoryPassive components   
File Size168KB,19 Pages
ManufacturerAVX
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02011J4R7BAWTR Overview

CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 25 V, 0.0000047 uF, SURFACE MOUNT, 0402

02011J4R7BAWTR Parametric

Parameter NameAttribute value
negative deviation2.13 %
Minimum operating temperature-55 Cel
Maximum operating temperature125 Cel
positive deviation2.13 %
Rated DC voltage urdc25 V
Processing package descriptionCHIP, ROHS COMPLIANT
each_compliYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateActive
Capacitor typeFILM CAPACITOR
capacitance4.70E-6 µF
dielectric materialsSILICON DIOXIDE AND NITRIDE
jesd_609_codee3
Manufacturer SeriesACCU-P
Installation featuresSURFACE MOUNT
packaging shapeRECTANGULAR PACKAGE
Package SizeSMT
cking_methodTR, 7/13 INCH
seriesSIZE(ACCU-P)
size code0402
Temperature Coefficient-/+30ppm/Cel
terminal coatingMATTE TIN OVER NICKEL
Terminal shapeWRAPAROUND
heigh0.4000 mm
length1 mm
width0.5500 mm
dditional_featureCAPACITANCE TOLERANCE IS 0.1 PICO FARAD
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