Cache SRAM, 512KX36, 4ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | SAMSUNG |
Parts packaging code | BGA |
package instruction | LBGA, BGA165,11X15,40 |
Contacts | 165 |
Reach Compliance Code | unknown |
ECCN code | 3A991.B.2.A |
Maximum access time | 4 ns |
Other features | PIPELINED ARCHITECTURE |
Maximum clock frequency (fCLK) | 138 MHz |
I/O type | COMMON |
JESD-30 code | R-PBGA-B165 |
JESD-609 code | e0 |
length | 15 mm |
memory density | 18874368 bit |
Memory IC Type | CACHE SRAM |
memory width | 36 |
Number of functions | 1 |
Number of terminals | 165 |
word count | 524288 words |
character code | 512000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 512KX36 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | LBGA |
Encapsulate equivalent code | BGA165,11X15,40 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, LOW PROFILE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 2.5/3.3,3.3 V |
Certification status | Not Qualified |
Maximum seat height | 1.4 mm |
Maximum standby current | 0.06 A |
Minimum standby current | 3.14 V |
Maximum slew rate | 0.29 mA |
Maximum supply voltage (Vsup) | 3.465 V |
Minimum supply voltage (Vsup) | 3.135 V |
Nominal supply voltage (Vsup) | 3.3 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | BALL |
Terminal pitch | 1 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 13 mm |
Base Number Matches | 1 |