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SSR1009DRZU

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 90V V(RRM), Silicon, HERMETIC SEALED, TO-254Z, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size63KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

SSR1009DRZU Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 90V V(RRM), Silicon, HERMETIC SEALED, TO-254Z, 3 PIN

SSR1009DRZU Parametric

Parameter NameAttribute value
MakerSSDI
Parts packaging codeTO-254Z
package instructionHERMETIC SEALED, TO-254Z, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.92 V
JESD-30 codeS-MSFM-P3
Maximum non-repetitive peak forward current200 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature175 °C
Maximum output current10 A
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage90 V
surface mountNO
technologySCHOTTKY
Terminal formPIN/PEG
Terminal locationSINGLE
Base Number Matches1
PRELIMINARY
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
SSR1008M & Z
SSR1009M & Z
SSR1010M & Z
10AMPS
80 - 100 VOLTS
SCHOTTKY
RECTIFIER
TO-254 (M)
TO-254Z (Z)
Designer's Data Sheet
FEATURES:
Extremely Low Forward Voltage Drop
Low Reverse Leakage
Hermetically Sealed Package
Guard Ring for Overvoltage Protection
Eutectic Die Attach
175
o
C Operating Junction Temperature
For TO-254Z Package Specify "Z" Suffix.
Also available in following configurations
Doubler: SSR1008DM & DZ
SSR1009DM & DZ
SSR1010DM & DZ
• TX, TXV and Space Level Screening Available
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage
SSR1008M & Z
SSR1009M & Z
SSR1010M & Z
SYMBOL
V
RRM
V
RWM
V
R
Io
VALUE
80
90
100
10
UNITS
Volts
Average Rectified Forward Current.
(Resistive load, 60Hz, Sine Wave, T
A
=25
o
C)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow
junction to reach equilibrium between pulses, T
A
= 25
o
C)
Operating and Storage Temperature
Maximum Thermal Resistance
Junction to Case
Amps
I
FSM
200
Amps
T
OP
& Tstg
R
2JC
-65 TO +175
1.7
o
o
C
C/W
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0205F

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