SILICON CONTROLLED RECTIFIER,50V V(DRM),25A I(T),TO-203AA
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | NXP |
package instruction | , |
Reach Compliance Code | unknown |
Nominal circuit commutation break time | 25 µs |
Critical rise rate of minimum off-state voltage | 50 V/us |
Maximum DC gate trigger current | 9 mA |
Maximum DC gate trigger voltage | 1.5 V |
Maximum holding current | 50 mA |
JESD-609 code | e0 |
Maximum leakage current | 1 mA |
On-state non-repetitive peak current | 250 A |
Maximum on-state voltage | 1.9 V |
Maximum on-state current | 25000 A |
Maximum operating temperature | 100 °C |
Minimum operating temperature | -40 °C |
Off-state repetitive peak voltage | 50 V |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Trigger device type | SCR |
Base Number Matches | 1 |
C233F | MCR230A3 | C233B | C232D | MCR231D3 | MCR230A | |
---|---|---|---|---|---|---|
Description | SILICON CONTROLLED RECTIFIER,50V V(DRM),25A I(T),TO-203AA | SILICON CONTROLLED RECTIFIER,100V V(DRM),25A I(T),TO-208VAR1/4 | SILICON CONTROLLED RECTIFIER,200V V(DRM),25A I(T),TO-203AA | SILICON CONTROLLED RECTIFIER,400V V(DRM),25A I(T),TO-203AA | SILICON CONTROLLED RECTIFIER,400V V(DRM),25A I(T),TO-208VAR1/4 | SILICON CONTROLLED RECTIFIER,100V V(DRM),25A I(T),TO-208VAR1/4 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
Nominal circuit commutation break time | 25 µs | 35 µs | 25 µs | 25 µs | 35 µs | 35 µs |
Critical rise rate of minimum off-state voltage | 50 V/us | 100 V/us | 50 V/us | 50 V/us | 100 V/us | 100 V/us |
Maximum DC gate trigger current | 9 mA | 40 mA | 9 mA | 25 mA | 20 mA | 40 mA |
Maximum DC gate trigger voltage | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V |
Maximum holding current | 50 mA | 100 mA | 50 mA | 50 mA | 100 mA | 100 mA |
Maximum leakage current | 1 mA | 1 mA | 1 mA | 1 mA | 1 mA | 1 mA |
On-state non-repetitive peak current | 250 A | 250 A | 250 A | 250 A | 250 A | 250 A |
Maximum on-state voltage | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V |
Maximum on-state current | 25000 A | 25000 A | 25000 A | 25000 A | 25000 A | 25000 A |
Maximum operating temperature | 100 °C | 100 °C | 100 °C | 100 °C | 100 °C | 100 °C |
Minimum operating temperature | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
Off-state repetitive peak voltage | 50 V | 100 V | 200 V | 400 V | 400 V | 100 V |
surface mount | NO | NO | NO | NO | NO | NO |
Trigger device type | SCR | SCR | SCR | SCR | SCR | SCR |
Maker | NXP | - | NXP | NXP | NXP | NXP |