CSD-8MTR13TIN/LEAD datasheet, PDF

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Datasheet> All Categories > Analog mixed-signal IC> Trigger device> CSD-8MTR13TIN/LEAD

CSD-8MTR13TIN/LEAD: DescriptionSilicon Controlled Rectifier, 8000mA I(T), 600V V(DRM); CategoryAnalog mixed-signal IC Trigger device; File Size489KB，2 Pages; ManufacturerCentral Semiconductor

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CSD-8MTR13TIN/LEAD Overview

Silicon Controlled Rectifier, 8000mA I(T), 600V V(DRM)

CSD-8MTR13TIN/LEAD Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Reach Compliance Code	unknown
Critical rise rate of minimum off-state voltage	200 V/us
Maximum DC gate trigger current	15 mA
Maximum DC gate trigger voltage	1.5 V
Maximum holding current	20 mA
JESD-609 code	e0
Maximum leakage current	2 mA
On-state non-repetitive peak current	80 A
Maximum on-state current	8000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Off-state repetitive peak voltage	600 V
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Trigger device type	SCR
Base Number Matches	1

CSD-8MTR13TIN/LEAD Related Products

	CSD-8MTR13TIN/LEAD	CSD-8MBKLEADFREE	CSD-8MBKTIN/LEAD	CSD-8MTR13LEADFREE	CSD-8NBKLEADFREE	CSD-8NTR13TIN/LEAD	CSD-8MLEADFREE	CSD-8NLEADFREE
Description	Silicon Controlled Rectifier, 8000mA I(T), 600V V(DRM)	Silicon Controlled Rectifier, 8000mA I(T), 600V V(DRM)	Silicon Controlled Rectifier, 8000mA I(T), 600V V(DRM)	Silicon Controlled Rectifier, 8000mA I(T), 600V V(DRM)	Silicon Controlled Rectifier, 8000mA I(T), 800V V(DRM)	Silicon Controlled Rectifier, 8000mA I(T), 800V V(DRM)	Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, PLASTIC, DPAK-3	Silicon Controlled Rectifier, 8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, PLASTIC, DPAK-3
Is it Rohs certified?	incompatible	conform to	incompatible	conform to	conform to	incompatible	conform to	conform to
Reach Compliance Code	unknown	compliant	unknown	compliant	compliant	unknown	not_compliant	not_compliant
Maximum DC gate trigger current	15 mA	15 mA	15 mA	15 mA	15 mA	15 mA	15 mA	15 mA
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Off-state repetitive peak voltage	600 V	600 V	600 V	600 V	800 V	800 V	600 V	800 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
Trigger device type	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	-	Central Semiconductor
Critical rise rate of minimum off-state voltage	200 V/us	200 V/us	200 V/us	200 V/us	200 V/us	200 V/us	-	-
Maximum DC gate trigger voltage	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	-	-
Maximum holding current	20 mA	20 mA	20 mA	20 mA	20 mA	20 mA	-	-
JESD-609 code	e0	-	e0	-	-	e0	e3	e3
Maximum leakage current	2 mA	2 mA	2 mA	2 mA	2 mA	2 mA	-	-
On-state non-repetitive peak current	80 A	80 A	80 A	80 A	80 A	80 A	-	-
Maximum on-state current	8000 A	8000 A	8000 A	8000 A	8000 A	8000 A	-	-
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	-	-	Tin/Lead (Sn/Pb)	MATTE TIN (315)	MATTE TIN (315)
Base Number Matches	1	1	1	1	1	1	1	-

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