Power Field-Effect Transistor, 5A I(D), 150V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | POWEREX |
Parts packaging code | TO-220S |
package instruction | SMALL OUTLINE, R-PSSO-G2 |
Contacts | 3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Shell connection | DRAIN |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 150 V |
Maximum drain current (Abs) (ID) | 5 A |
Maximum drain current (ID) | 5 A |
Maximum drain-source on-resistance | 0.38 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PSSO-G2 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 2 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 30 W |
Maximum power dissipation(Abs) | 30 W |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | GULL WING |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |