Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | International Rectifier ( Infineon ) |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Avalanche Energy Efficiency Rating (Eas) | 100 mJ |
Shell connection | DRAIN |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 100 V |
Maximum drain current (ID) | 5.6 A |
Maximum drain-source on-resistance | 0.54 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-220AB |
JESD-30 code | R-PSFM-T3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 175 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | 225 |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 43 W |
Maximum pulsed drain current (IDM) | 20 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | TIN LEAD |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | 30 |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |