MTP4N10 datasheet, PDF - EEWORLD Datasheet

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MTP4N10: DescriptionTRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,4A I(D),TO-220AB; CategoryDiscrete semiconductor The transistor; File Size28KB，1 Pages; ManufacturerNational Semiconductor（TI ）; Websitehttp://www.ti.com

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MTP4N10 Overview

TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,4A I(D),TO-220AB

MTP4N10 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	compliant
Configuration	Single
Maximum drain current (Abs) (ID)	4 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	50 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Base Number Matches	1

MTP4N10 Related Products

	MTP4N10	IRF710	IRF711	MTP2N20	MTP4N08	IRF612	IRF613	IRF511	IRF513
Description	TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,4A I(D),TO-220AB	TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,2A I(D),TO-220AB	TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,2A I(D),TO-220AB	TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,2A I(D),TO-220AB	TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,4A I(D),TO-220AB	TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,2.6A I(D),TO-220AB	TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,2.6A I(D),TO-220AB	TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,5.6A I(D),TO-220AB	TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,4.9A I(D),TO-220AB
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	compliant	compliant	unknown	compliant	compliant	unknown	unknown	compliant	compliant
Configuration	Single	Single	Single	Single	Single	Single	Single	Single	Single
Maximum drain current (Abs) (ID)	4 A	2 A	2 A	2 A	4 A	2.6 A	2.6 A	5.6 A	4.9 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	50 W	36 W	36 W	50 W	50 W	43 W	43 W	43 W	43 W
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Maker	-	National Semiconductor（TI ）	National Semiconductor（TI ）	-	National Semiconductor（TI ）	National Semiconductor（TI ）	National Semiconductor（TI ）	National Semiconductor（TI ）	National Semiconductor（TI ）
Maximum drain current (ID)	-	-	-	-	4 A	2.6 A	2.6 A	5.6 A	4.9 A

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