BUK7510-30 datasheet, PDF - EEWORLD Datasheet

BUK7510-30: DescriptionTRANSISTOR 75 A, 30 V, 0.0195 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size50KB，8 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BUK7510-30 Overview

TRANSISTOR 75 A, 30 V, 0.0195 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	ESD PROTECTION
Avalanche Energy Efficiency Rating (Eas)	200 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	75 A
Maximum drain current (ID)	75 A
Maximum drain-source on-resistance	0.0195 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	142 W
Maximum pulsed drain current (IDM)	240 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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