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XR1004-BD-000V

Description
Telecom Circuit, 1-Func, DIE-12
CategoryWireless rf/communication    Telecom circuit   
File Size1MB,8 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Environmental Compliance
Download Datasheet Parametric View All

XR1004-BD-000V Overview

Telecom Circuit, 1-Func, DIE-12

XR1004-BD-000V Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeDIE
package instructionDIE,
Contacts12
Reach Compliance Codecompliant
JESD-30 codeR-XUUC-N12
Number of functions1
Number of terminals12
Package body materialUNSPECIFIED
encapsulated codeDIE
Package shapeRECTANGULAR
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Nominal supply voltage4 V
surface mountYES
Telecom integrated circuit typesTELECOM CIRCUIT
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
XR1004-BD
Receiver
30.0-46.0 GHz
Features
Sub-harmonic Receiver
Integrated LNA, LO Doubler/Buffer,
Image Reject Mixer
+4.0 dBm Input Third Order Intercept (IIP3)
+2.0 dBm LO Drive Level
9.0 dB Conversion Gain
3.5 dB Noise Figure
18.0 dB Image Rejection
100% On-Wafer RF, DC & Noise Figure Testing
100% Commercial-Level Visual Inspection Using
Mil-Std-883 Method 2010
RoHS* Compliant and 260°C Reflow Compatible
Rev. V1
Chip Device Layout
Absolute Maximum Ratings
Parameter
Absolute Max.
+6.0 VDC
110,180 mA
+0.3 VDC
+5 dBm
-65 ºC to +165 ºC
-55 ºC to Table
1
MTTF Table
1
Supply Voltage (Vd)
Supply Current (Id1,2), (Id3)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
(1)
Description
M/A-COM Tech’s 30.0-46.0 GHz GaAs MMIC
receiver has a noise figure of 3.5 dB and 18.0 dB
image rejection across the band. This device is a
three stage LNA followed by an image reject
resistive pHEMT mixer and includes an integrated
LO doubler and LO buffer amplifer. The image reject
mixer eliminates the need for a bandpass filter after
the LNA to remove thermal noise at the image
frequency. The use of integrated LO doubler and LO
buffer amplifier makes the provision of the LO easier
than for fundamental mixers at these frequencies. I
and Q mixer outputs are provided and an external
90 degree hybrid is required to select the desired
sideband. This MMIC uses M/A-COM Tech’s GaAs
PHEMT device model technology, and is based
upon electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Channel temperature affects a device's MTTF. It is recommended to
keep channel temperature as low as possible for maximum life.
Ordering Information
Part Number
XR1004-BD-000V
XR1004-BD-EV1
Package
Where “V” is RoHS compli-
ant die packed in vacuum
released gel paks
evaluation module
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
India
Tel: +91.80.43537383
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.

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