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SD5002N

Description
TRANSISTOR 50 mA, 15 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size82KB,3 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
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SD5002N Overview

TRANSISTOR 50 mA, 15 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal

SD5002N Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PDIP-T16
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationCOMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage15 V
Maximum drain current (ID)0.05 A
Maximum drain-source on-resistance70 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.5 pF
JESD-30 codeR-PDIP-T16
Number of components4
Number of terminals16
Operating modeENHANCEMENT MODE
Maximum operating temperature85 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

SD5002N Related Products

SD5002N SD5002J
Description TRANSISTOR 50 mA, 15 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal TRANSISTOR 50 mA, 15 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
package instruction IN-LINE, R-PDIP-T16 IN-LINE, R-CDIP-T16
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Configuration COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 15 V 15 V
Maximum drain current (ID) 0.05 A 0.05 A
Maximum drain-source on-resistance 70 Ω 70 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 0.5 pF 0.5 pF
JESD-30 code R-PDIP-T16 R-CDIP-T16
Number of components 4 4
Number of terminals 16 16
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 85 °C 85 °C
Package body material PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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