|
SD5002N |
SD5002J |
Description |
TRANSISTOR 50 mA, 15 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal |
TRANSISTOR 50 mA, 15 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal |
package instruction |
IN-LINE, R-PDIP-T16 |
IN-LINE, R-CDIP-T16 |
Reach Compliance Code |
unknown |
unknown |
ECCN code |
EAR99 |
EAR99 |
Configuration |
COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE |
COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage |
15 V |
15 V |
Maximum drain current (ID) |
0.05 A |
0.05 A |
Maximum drain-source on-resistance |
70 Ω |
70 Ω |
FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
Maximum feedback capacitance (Crss) |
0.5 pF |
0.5 pF |
JESD-30 code |
R-PDIP-T16 |
R-CDIP-T16 |
Number of components |
4 |
4 |
Number of terminals |
16 |
16 |
Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
Maximum operating temperature |
85 °C |
85 °C |
Package body material |
PLASTIC/EPOXY |
CERAMIC, METAL-SEALED COFIRED |
Package shape |
RECTANGULAR |
RECTANGULAR |
Package form |
IN-LINE |
IN-LINE |
Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
Certification status |
Not Qualified |
Not Qualified |
surface mount |
NO |
NO |
Terminal form |
THROUGH-HOLE |
THROUGH-HOLE |
Terminal location |
DUAL |
DUAL |
transistor applications |
SWITCHING |
SWITCHING |
Transistor component materials |
SILICON |
SILICON |