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HVB300

Description
Rectifier Diode, 1 Element, 0.22A, 300000V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size86KB,1 Pages
ManufacturerDean Technology
Download Datasheet Parametric Compare View All

HVB300 Overview

Rectifier Diode, 1 Element, 0.22A, 300000V V(RRM), Silicon,

HVB300 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-XALF-W2
Number of components1
Number of terminals2
Maximum output current0.22 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage300000 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1

HVB300 Related Products

HVB300 XRB175
Description Rectifier Diode, 1 Element, 0.22A, 300000V V(RRM), Silicon, Rectifier Diode, 1 Element, 0.22A, 175000V V(RRM), Silicon,
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-XALF-W2 O-XALF-W2
Number of components 1 1
Number of terminals 2 2
Maximum output current 0.22 A 0.22 A
Package body material UNSPECIFIED UNSPECIFIED
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 300000 V 175000 V
surface mount NO NO
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
Base Number Matches 1 1

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