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PS2581AL2Q

Description
NPN-OUTPUT DC-INPUT OPTOCOUPLER,1-CHANNEL,5KV ISOLATION,SO
CategoryLED optoelectronic/LED    photoelectric   
File Size91KB,12 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

PS2581AL2Q Overview

NPN-OUTPUT DC-INPUT OPTOCOUPLER,1-CHANNEL,5KV ISOLATION,SO

PS2581AL2Q Parametric

Parameter NameAttribute value
Reach Compliance Codecompliant
Current transmission ratio - minimum value100%
Maximum forward current0.03 A
Maximum forward voltage1.4 V
Maximum insulation voltage5000 V
Installation featuresSURFACE MOUNT
Number of components1
Maximum on-state current0.03 A
Maximum operating temperature100 °C
Minimum operating temperature-55 °C
Maximum power dissipation0.15 W
surface mountYES
Base Number Matches1
DATA SHEET
PHOTOCOUPLER
PS2581AL1,PS2581AL2
LONG CREEPAGE HIGH ISOLATION VOLTAGE
4-PIN PHOTOCOUPLER
−NEPOC
Series−
DESCRIPTION
The PS2581AL1, PS2581AL2 are optically coupled isolators containing a GaAs light emitting diode and an NPN
silicon phototransistor in a plastic DIP (Dual In-line Package) to realize an excellent cost performance.
Creepage distance and clearance of leads are over 8 millimeters.
The PS2581AL2 is lead bending type (Gull-wing) for surface mounting.
FEATURES
• Lead-free product : Solder plating specification Sn-Bi
• Long creepage and clearance distance (8 mm)
• High isolation voltage (BV = 5 000 Vr.m.s.)
• High-speed switching (t
r
= 5
µ
s TYP., t
f
= 7
µ
s TYP.)
• UL, BSI, CSA, NEMKO, DEMKO, SEMKO, FIMKO approved
• DIN EN60747-5-2 (VDE0884 Part2) approved
1
2
4
PIN CONNECTION
(Top View)
3
1. Anode
2. Cathode
3. Emitter
4. Collector
APPLICATIONS
• Power supply
• Telephone/FAX.
• FA/OA equipment
• Programmable logic controller
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PN10223EJ02V0DS (2nd edition)
Date Published May 2004 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices 2003 , 2004

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