Small Signal Field-Effect Transistor, 0.3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-226AA (TO-92), 3 PIN
Parameter Name | Attribute value |
package instruction | TO-226AA (TO-92), 3 PIN |
Reach Compliance Code | unknown |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 80 V |
Maximum drain current (ID) | 0.3 A |
Maximum drain-source on-resistance | 4 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
Maximum feedback capacitance (Crss) | 10 pF |
JEDEC-95 code | TO-226AA |
JESD-30 code | O-PBCY-W3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | ROUND |
Package form | CYLINDRICAL |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | WIRE |
Terminal location | BOTTOM |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |
VN0808L-18 | VN0808LTA | |
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Description | Small Signal Field-Effect Transistor, 0.3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-226AA (TO-92), 3 PIN | Small Signal Field-Effect Transistor, 0.3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-226AA (TO-92), 3 PIN |
package instruction | TO-226AA (TO-92), 3 PIN | TO-226AA (TO-92), 3 PIN |
Reach Compliance Code | unknown | unknown |
Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 80 V | 80 V |
Maximum drain current (ID) | 0.3 A | 0.3 A |
Maximum drain-source on-resistance | 4 Ω | 4 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
Maximum feedback capacitance (Crss) | 10 pF | 10 pF |
JEDEC-95 code | TO-226AA | TO-226AA |
JESD-30 code | O-PBCY-W3 | O-PBCY-W3 |
Number of components | 1 | 1 |
Number of terminals | 3 | 3 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | ROUND | ROUND |
Package form | CYLINDRICAL | CYLINDRICAL |
Polarity/channel type | N-CHANNEL | N-CHANNEL |
Certification status | Not Qualified | Not Qualified |
surface mount | NO | NO |
Terminal form | WIRE | WIRE |
Terminal location | BOTTOM | BOTTOM |
transistor applications | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON |
Base Number Matches | 1 | 1 |