Power Field-Effect Transistor, 12A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Parameter Name | Attribute value |
Maker | Motorola ( NXP ) |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Shell connection | DRAIN |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 100 V |
Maximum drain current (ID) | 12 A |
Maximum drain-source on-resistance | 0.16 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-220AB |
JESD-30 code | R-PSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 75 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Transistor component materials | SILICON |
Base Number Matches | 1 |