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MDM14001WM-10

Description
Nibble Mode DRAM, 4MX1, 100ns, CMOS, CDSO20
Categorystorage    storage   
File Size525KB,12 Pages
ManufacturerMOSAIC
Websitehttp://www.mosaicsemi.com/
Download Datasheet Parametric View All

MDM14001WM-10 Overview

Nibble Mode DRAM, 4MX1, 100ns, CMOS, CDSO20

MDM14001WM-10 Parametric

Parameter NameAttribute value
MakerMOSAIC
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
access modeNIBBLE
Maximum access time100 ns
Other featuresRAS/CBR/HIDDEN REFRESH
JESD-30 codeR-CDSO-N20
memory density4194304 bit
Memory IC TypeNIBBLE MODE DRAM
memory width1
Number of functions1
Number of ports1
Number of terminals20
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize4MX1
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
refresh cycle1024
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formNO LEAD
Terminal locationDUAL
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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