Fast Page DRAM, 4MX1, 80ns, CMOS, PDSO20,
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | LG Semicon Co., Ltd. |
Reach Compliance Code | unknown |
Maximum access time | 80 ns |
I/O type | SEPARATE |
JESD-30 code | R-PDSO-G20 |
JESD-609 code | e0 |
memory density | 4194304 bit |
Memory IC Type | FAST PAGE DRAM |
memory width | 1 |
Number of terminals | 20 |
word count | 4194304 words |
character code | 4000000 |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 4MX1 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | TSSOP |
Encapsulate equivalent code | TSSOP20/26,.36 |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
power supply | 5 V |
Certification status | Not Qualified |
refresh cycle | 1024 |
self refresh | NO |
Maximum standby current | 0.001 A |
Maximum slew rate | 0.09 mA |
Nominal supply voltage (Vsup) | 5 V |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | GULL WING |
Terminal pitch | 0.635 mm |
Terminal location | DUAL |
Base Number Matches | 1 |