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AA038N3-00

Description
Wide Band Low Power Amplifier, 37000MHz Min, 40000MHz Max, 1 Func, GAAS, DIE
CategoryWireless rf/communication    Radio frequency and microwave   
File Size43KB,2 Pages
ManufacturerSkyworks
Websitehttp://www.skyworksinc.com
Download Datasheet Parametric View All

AA038N3-00 Overview

Wide Band Low Power Amplifier, 37000MHz Min, 40000MHz Max, 1 Func, GAAS, DIE

AA038N3-00 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSkyworks
package instructionDIE OR CHIP
Reach Compliance Codeunknown
structureCOMPONENT
Gain10 dB
Maximum input power (CW)10 dBm
JESD-609 codee0
Number of functions1
Maximum operating frequency40000 MHz
Minimum operating frequency37000 MHz
Maximum operating temperature90 °C
Minimum operating temperature-55 °C
Encapsulate equivalent codeDIE OR CHIP
power supply5 V
RF/Microwave Device TypesWIDE BAND LOW POWER
Maximum slew rate27 mA
technologyGAAS
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
37–40 GHz GaAs MMIC
Low Noise Amplifier
AA038N3-00
Features
s
Single Bias Supply Operation (5 V)
s
3.5 dB Typical Noise Figure at 38 GHz
s
13 dB Typical Small Signal Gain
s
0.25
µm
Ti/Pd/Au Gates
s
100% On-Wafer RF, DC and Noise
Figure Testing
s
100% Visual Inspection to MIL-STD-883
MT 2010
0.000
0.000
0.085
1.283
1.525
1.610
0.655
Chip Outline
1.310
1.225
Description
Alpha’s three-stage reactively-matched 37–40 GHz
MMIC low noise amplifier has typical small signal gain of
13 dB with a typical noise figure of 3.5 dB at 38 GHz.
The chip uses Alpha’s proven 0.25
µm
low noise PHEMT
technology, and is based upon MBE layers and electron
beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process.
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic
Operating Temperature (T
C
)
Storage Temperature (T
ST
)
Bias Voltage (V
D
)
Power In (P
IN
)
Junction Temperature (T
J
)
Value
-55°C to +90°C
-65°C to +150°C
6 V
DC
10 dBm
175°C
Electrical Specifications at 25°C
Parameter
Drain Current
Small Signal Gain
Noise Figure
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain
Thermal Resistance
2
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3. Typical represents the median parameter value across the specified
frequency range for the median chip.
Condition
V
D
= 5 V
F = 37–40 GHz
F = 38 GHz
F = 37–40 GHz
F = 37–40 GHz
Compression
1
F = 38 GHz
Symbol
I
DS
G
NF
RL
I
RL
O
P
1 dB
Θ
JC
Min.
10
Typ.
3
20
13
3.5
-12
-12
6
202
Max.
27
3.8
-6
-6
Unit
mA
dB
dB
dB
dB
dBm
°C/W
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 8/00A
1

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