KTC3880S datasheet, PDF - EEWORLD Datasheet

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KTC3880S: DescriptionGeneral Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 30V; IC (A): 0.02A; HFE Min: 40; HFE Max: 240; VCE (V): 6V; IC (mA): 2mA; FT Min (MHz): 500 MHz; PTM Max (W): 0.15W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23; CategoryDiscrete semiconductor The transistor; File Size214KB，3 Pages; ManufacturerGalaxy Microelectronics

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KTC3880S Overview

General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 30V; IC (A): 0.02A; HFE Min: 40; HFE Max: 240; VCE (V): 6V; IC (mA): 2mA; FT Min (MHz): 500 MHz; PTM Max (W): 0.15W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23

KTC3880S Parametric

Parameter Name	Attribute value
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
Other features	LOW NOISE
Maximum collector current (IC)	0.02 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	550 MHz
Base Number Matches	1

KTC3880S Related Products

	KTC3880S	KTC3880S-Y	KTC3880S-O	KTC3880S-R
Description	General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 30V; IC (A): 0.02A; HFE Min: 40; HFE Max: 240; VCE (V): 6V; IC (mA): 2mA; FT Min (MHz): 500 MHz; PTM Max (W): 0.15W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23	Small Signal Bipolar Transistor, 0.02A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.02A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.02A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon,
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown	unknown	unknown
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.02 A	0.02 A	0.02 A	0.02 A
Collector-emitter maximum voltage	30 V	30 V	30 V	30 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	100	70	40
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	550 MHz	550 MHz	550 MHz	550 MHz
Base Number Matches	1	1	1	-

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